The effect of energy, dosage, and temperature of irradiation of silicon-on-sapphire structures by Si+ ions, as well as parameters of recrystallization annealing, on crystallinity of silicon film is shown. Implantation conditions and recrystallization annealing conditions are determined.

The angular distribution of atoms sputtered from Co5Sm alloy under 3keV Ar+ and 10keV Xe+ ion bombardment (normal incidence) has been studied experimentally. RBS was used to analyze a material deposited on a collector. The surface composition of NixPdy alloys (x, y=1, 3, 5) irradiated by 3keV Ar+ ions was also investigated in situ by Auger electron spectroscopy. Results of these measurements compared with our previous data on component angular distributions sputtered from Ni5Pd alloy. Sm segregation was found to effect on component angular distributions sputtered from Co5Sm alloy. It has been found by using AES that Pd segregates to the surface in Ni5Pd–NiPd3 alloys, while Ni – in NiPd5 alloy. A new approach to description of component angular distributions sputtered from NixPdy and Co5Sm alloys presented.

The elemental composition and surface structure of polyvinyltrimethylsilane exposed in oxygen plasma flow accelerated to an energy of 20–30 eV are studied by scanning electron microscopy and X-ray microanalysis. A microrelief is developed on the surface of the material reflecting its fibrillar supramolecular structure: the oxygen concentration increases, but the carbon concentration decreases. The surface is contaminated with Cu and F atoms as a result of their emission to the plasma due to the wear of the accelerator components.

The angular distributions of Ni and Pd atoms are obtained under 3-and 10-keV Ar + ion bombardment of Ni-Pd alloys with different concentrations of the components and are studied both experimentally and by computer simulation. The angular distributions of the sputtered components are studied by the methods of Rutherford backscattering and X-ray microanalysis, and the composition of the irradiated surface by Auger spectroscopy. It is established that the type of element segregating to the surface changes in passing from NiPd 3 to NiPd 5 , which leads to changes in both the angular distributions and the composition of the target surface layer.

The angular distribution of atoms sputtered from Ni(x)Pd(y) alloys (x, y = 1, 5) under 3 and 10 keV Ar(+) ion bombardment has been studied experimentally and using computer simulations. A collector technique combined with RBS to analyze the distribution of collected material was used. It was found that the Pd/Ni yield ratio increases with the polar ejection angle theta for all targets excluding NiPd(5). This peculiarity of sputtering was explained by a reversion of atomic segregation at high initial concentrations of Pd atoms in the target.

The surface topography of silicon and germanium single crystals formed under 10-keV Ar + and Ne + irradiation was studied experimentally. A relief with typical nanometer-scale dimensions is detected using atomic-force microscopy. It is established that the average height of the nanorelief formed depends on the silicon doping levels. It is also shown that the average height is determined by the parameters of ion irradiation.

The angular distribution of atoms sputtered from germanium under 1–20 keV Ar+ ion bombardment (normal incidence) has been studied experimentally and using computer simulations. A collector technique combined with Rutherford backscattering to analyze the distribution of collected material was used. In addition, the surface topography was under control. It was found that the experimental angular distribution of sputtered atoms (E 0=3–10 keV) could be approximated by the function cos n θ with n≈ 1.65. Such a high value of n is connected with the surface scattering of ejected atoms and a noticeable contribution of backscattered ions to the formation of the sputter flux (the mass effect). The target surface was found to be practically flat even at ion fluencies ∼1018 ions/cm2. The results obtained are compared with data from the literature, including our recent data on Si sputtering.

The angular distribution of atoms sputtered from silicon under 1–10 keV Ar ion bombardment (normal incidence) has been studied experimentally and using computer simulation. It has been found that the angular distribution is overcosine in the whole energy range studied. This is connected with a high contribution of secondary knock-on atoms to the sputter flux (cascade sputtering). The simulated angular distributions are shown to be quite sensitive to the variation of the interatomic potential. The results obtained are compared with data from the literature.