This paper presents preliminary results of actual measured and simulated performances of a first year 806.52 kWp grid connected photovoltaic power plant located at Assa, southern Morocco (28.63°N 9.47°W). The PV system consists of 8 AICHI on-grid PV inverters, 100 kVA each and 3432 SHARP Brand 235 kWp modules. The plant is divided into two groups of 4 inverters, each inverter is supplied by a PV field consisting of 33 strings of 13 seriesconnected modules facing south at a fixed tilt of 20°.The data presented in this study were monitored during the first year of operation of the plant. The performances of the system were simulated using PVsyst software then compared with real measured data. By December 31st 2015, the plant supplied 1331.29 MWh to the local utility grid. The mean actual measured specific yield, final yield, reference yield, system efficiency, performance ratio and total energy losses are 1650.66 kWh/kWp, 4.57 kWh/kWp/day, 6.763h/day, 9.97%, 70.14% and 2.053 kWh/kWp/day respectively. The predicted values of those parameters are in close agreement with the measured results. They were found to be 1384.01 MWh, 1716.024 kWh/kWp, 4.68 kWh/kWp/day, 6.022 h/day, 10.36%, 77.9% and 1.331 kWh/kWp/day respectively. The detailed comparative study in this paper serves as a reference for continuous performance analysis of the PV plant. Besides, the comparison of actual measurements collected on site with simulated estimates given by PVsyst can help to track closely the power generation, and to establish an adequate maintenance plan.

Titanium dioxide thin films have been prepared by Spin Coating of sol precursor onto glass substrates. The products used were titanium isopropoxyde (TTIP), ethanol and HCl. The films are homogenous, transparent and highly adherents. The UV-Vis-IR characterizations showed that the films present a high transmission (90%). The best layers were obtained when concentred HCl was added to the sol solutions. The band gap energy of these films is as high as 3.9 eV, and their refractive index is found to vary from 2 to 2.4.

In2S3 thin films were deposited by flash evaporation of In2S3 powder. The effect of annealing in vacuum and under sulphur and oxygen atmosphere on the structural, compositional and optical properties of these films was investigated. X-ray diffraction studies reveal that the as-deposited films are amorphous. The formation of beta-In2S3 phase is obtained after annealing under vacuum at 693 K or under sulphur pressure at a lower annealing temperature (573 K). The EDAX analysis reveals that the sulphurized films are nearly stoichiometric and those annealed in vacuum are sulphur defficient. Optical transmission spectra showed a slight shift of the absorption edge towards lower wavelengths. The optical gap value varied between 2.4 and 3 eV as a function of the film thickness, the annealing temperature and the atmosphere ambient.

CuInSe 2 thin films were prepared by one step electrodeposition from reagents CuSO 4 , In 2 (SO 4 ) 3 , SeO 2 and using citric acid as complexing agent. The influence of deposition parameters (electrolyte composition, concentration of reagent and deposition potential) on film composition was studied. The structure, composition, morphology and opto-electric properties of as deposited and of annealed films were investigated. The stoichiometric CulnSe 2 were obtained at concentration of reagent: 3, 3 and 5mM respectively at potentials varying between -500 and -700 mV. The formation of chalcopyrite phase of CulnSe 2 was confirmed by X-ray diffraction for samples annealed at temperature above 350°C. The concentration of In 2 (SO 4 ) 3 affects the composition of In and Se in the films. Optical absorption studies indicate band gap values between 1.01 and 1.10 eV. The electrical resistivity of the films at room temperature is in the order of 10 Ωcm.

CuInSe 2 thin films were prepared by one step electrodeposition from reagents CuSO 4 , In 2 (SO 4 ) 3 , SeO 2 and using citric acid as complexing agent. The influence of deposition parameters (electrolyte composition, concentration of reagent and deposition potential) on film composition was studied. The structure, composition, morphology and opto-electric properties of as deposited and of annealed films were investigated. The stoichiometric CulnSe 2 were obtained at concentration of reagent: 3, 3 and 5mM respectively at potentials varying between -500 and -700 mV. The formation of chalcopyrite phase of CulnSe 2 was confirmed by X-ray diffraction for samples annealed at temperature above 350°C. The concentration of In 2 (SO 4 ) 3 affects the composition of In and Se in the films. Optical absorption studies indicate band gap values between 1.01 and 1.10 eV. The electrical resistivity of the films at room temperature is in the order of 10 Ωcm.

CuInSe2 thin films were prepared by one step electrodeposition from reagents CuSO4, In-2(SO4)(3), SeO2 and using citric acid as complexing agent. The influence of deposition parameters (electrolyte composition, concentration of reagent and deposition potential) on film composition was studied. The structure, composition, morphology and opto-electric properties of as deposited and of annealed films were investigated. The stoichiometric CuInSe2 were obtained at concentration of reagent: 3, 3 and 5mM respectively at potentials varying between -500 and -700 mV. The formation of chalcopyrite phase of CuInSe2 was confirmed by X-ray diffraction for samples annealed at temperature above 350 degrees C. The concentration of In-2(SO4)(3) affects the composition of In and Se in the films. Optical absorption studies indicate band gap values between 1.01 and 1. 10 eV. The electrical resistivity of the films at room temperature is in the order of 10 Omega cm.

In this article, we present the transport properties of W/C multilayers which are generally studied for their optical properties (X-ray mirrors). For the thinnest tungsten layers the magnetoresistance is clearly governed by weak localization. We point out the importance of electron-electron interactions.

We present a dynamical magneto-optical study of an Au/Co/Au sandwich with a magnetic field variation rate up to 2 MOe/s. An interpretation of dynamical effects at room temperature is proposed, using a modeling of the magnetization reversal. Finally, the magnetic domain structure is observed by Magnetic Force Microscopy.

We present a dynamical study of hysteresis loops of a MoS2/[Au/Co/Au] sandwich performed by surface magneto-optical Kerr effect with a field variation rate up to 1.2 MOe/s. An interpretation of dynamical effects at room temperature is proposed, using a modelization of the magnetization reversal. We discuss simulations which describe two different processes of the magnetization reversal to interpret the evolution of the hysteresis loops for several rates of variation of the magnetic field. For a first range of field variation rates lower than 180 kOe/s, the predominant mechanism seems to be wall motion and beyond 180 kOe/s, an expression for the magnetization is given, which supposes micro-domains reversal as a prevailing process. Finally, the general behaviour of the relaxation time, depending on the magnetic field, is investigated.

We have elaborated by MBE, Ho Zr multilayers in which holmium crystallographic parameters are considerably reduced compared to bulk. We correlate magnetoresistance measurements with the magnetization under very high magnetic field. We point out a sharp magnetic transition due to the closing of the conical or helical configurations as in bulk material. This effect disappears for the lower thicknesses of Ho layers and the transition field changes with the magnetic coupling through the zirconium layers.

We studied the magnetoresistance of Ni/Ti, NiC/Ti and Co/Cu sputtered multilayers. In fields below 2 T, the Co/Cu films exhibit previously described giant magnetoresistance. We observe an unusual negative contribution to the magnetoresistance in high fields whose origin is not well understood at this time.

W/C multilayers were grown by the sputtering technique. For tungsten layers 10 nm thick, the resistivity and the magnetoresistance exhibit a 3D classical behavior while the transport properties, for thickness of about 2 nm, can be described in the framework of 2D weak localization theory.