The simulation results of the temperature distribution in the growth area of graphene layers obtained by the method of thermal decomposition of the silicon carbide surface substrates in setup with induction heating are presented. The heating parameters of the setup elements are calculated using the commercial package COMSOL Multiphysics taking into account the electrical, thermal and magnetic properties of the materials from which the growth plant elements are made. A numerical estimate of the heating inhomogeneity of silicon carbide plates over its area during the growth of graphene layers at a given temperature is given. It is shown that the lateral temperature distribution over the area of the plate has radial symmetry with decreasing values towards the center.

An approach is presented to optimizing the growth of graphene on silicon carbide (SiC) substrates by using numerical simulation methods. The presented models in axisymmetric approximation show good convergence with experimental results and allow the studies of tem-perature fields inside closed growth cells. It is concluded that the use of numerical calculation methods is promising for optimizing the design of a technological setup for graphene growth by sublimation of the SiC surface.