Amorphous silicon carbide (a-SiC) is an excellent alternative passivation layer material for silicon solar cells especially working in hard and space environment. Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) layers were deposited on P-type Si(1 0 0) substrates at various deposition conditions by means of plasma enhanced chemical vapor deposition (PECVD) technology using silane (SiH4) methane (CH4) and ammonium (NH3) gas as precursors. The concentration of elements in layers was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical compositions were analyzed by Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. Irradiation of samples by fast neutrons with fluence 1.4 x 10(14) cm(-2) was used. No significance effect on the IR spectra band features after neutron irradiation was observed. Intensity of Raman spectra band features was decreased after neutron irradiation. The measured currents after irradiation are greater (up to 100 times) than the current before irradiation for all samples. (C) 2012 Elsevier B. V. All rights reserved.

Nanocrystalline diamond/amorphous composite carbon films were deposited by plasma enhanced chemical vapour deposition method. The concentrations of species in the films were determined by RBS (Rutherford backscattering spectrometry) and ERD (elastic recoil detection) methods. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at. %. Chemical compositions were analyzed by FTIR spectroscopy. IR results showed the presence of C-H specific bonds. Film was used for photocathode application. The original quantum efficiency of prepared photocathode at energy of FH 15,6mJ was 1,43x10-6%.

Nanocrystalline silicon carbide was prepared by PECVD technology in capacitively parallel plate plasma reactor, where both silane and methane were introduced into the plasma reactor. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM. The RBS results showed the main concentrations of Si and C in the films. The concentration of hydrogen was approximately 20 at.%. IR results showed the presence of Si-C, Si-O, Si-N, Si-H, N-H, C-H, C-N specific bonds. The AFM micrographs revealed the film surface smooth and compact. Results of I-V measurements before and after samples irradiation by neutrons are presented.

Hydrogenated amorphous silicon carbon nitride films were grown by plasma enhanced chemical vapor deposition (PECVD) technique. The flow rates of SiH4 , CH4 and NH3 gases were 6 sccm, 30 sccm and 8 sccm, respectively. The deposition temperatures were 350, 400 and 450 ◦C. The RBS and ERD results showed that the concentrations of Si, C, N and H are practically the same in the films deposited at substrate temperatures in the range 350-450 ◦C. In photoluminescence spectra we identified two peaks and assigned them to radiative transitions typical for amorphous materials, ie band to band and defect-related ones. The electrical characterization consists of I(V ) measurement in sandwich configuration for voltages up to 100 V. From electrical characterization, it was found that with increased deposition temperature the resistivity of the amorphous SiCN film was reduced.

Silicon carbide films were deposited at two deposition temperatures 350 degrees C and 450 degrees C by means of ECR plasma reactor with two gas mixtures: (1) gas mixture, SiH4 (5 sccm), CH4 (14 sccm), Ar (6 sccm), NH3 (2 sccm) and (2) gas mixture SiH4 (5 sccm), CH4 (14 sccm), H-2 (6 sccm), NH3 (2 sccm). The concentration of species in the SiC films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical compositions were analyzed by infrared (IR) spectroscopy. Photoluminescence (PL) spectra were measured at 300 K. The RBS and ERD results showed that the concentrations of Si and C in the films are practically the same. The concentration of hydrogen decreased from 30 to 22 at.% with an increasing sample deposition temperature. The films contain a small amount of nitrogen and oxygen. IR results showed the presence of Si-C, Si-N, Si-H, C-H and Si-O bonds. PL results showed the decrease of the PL intensity with an increasing sample deposition temperature.

A capacitively coupled plasma reactor was used for PECVD technology, where methane was introduced into the plasma reactor through the shower head. The concentration of species in the carbon films were determined by RBS and ERD method. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at.%. The films contain a small amount of oxygen and nitrogen. Chemical compositions were analyzed by FTIR spectroscopy. IR results showed the presence of C-H specific bonds.

This work presents the properties of nanocrystalline SiC(nc-SiC) films prepared by plasma enhanced chemical vapour deposition. A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the nc-SiC:H films. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM. The RBS results showed the main concentrations of Si and C in the films. The concentration of hydrogen was approximately 20 at.%. IR results showed the presence of Si-C, Si-O, Si-N, Si-H, N-H, C-H, C-N specific bonds. Results of current-voltage (I-V) measurements before and after samples irradiation by neutrons are presented.