The tracer self-diffusaon coefficients DT of implanted 71Ge and 31Si in both relaxed monocrystalline SiyGe1-y epilayers and specimens made from bulk SiyGe1-y have been measured as functions of temperature T (653°C ≤ T ≤ 1263°C) and composition y (0 ≤ y ≤ 1) by means of radiotracer techniques, in which serial sectioning was done by ion-beam sputtering. For all compositions, the T dependencies of DT for 71Ge and 31Si are of Arrhenius type. The y dependencies of the pre-exponential factors of the self-diffusaon coefficients and of the diffusaon enthalpies show a break at y a 0.65. This is interpreted in terms of a transition from interstitialcy-(y ≥ 0.65) to vacancy-(y ≤ 0.65) mediated self-diffusion.
F. Baier合作论文数1P. Laitinen合作论文数1M. Rouijaa合作论文数1Werner Frank合作论文数1H.-E. Schaefer合作论文数1K. Reimann合作论文数1W. Frank合作论文数1J. Räisänen合作论文数1
Wolf Aßmus合作论文数Physikalisches Institut, Goethe-Universität Frankfurt1Roland Würschum合作论文数Institut für Materialphysik, Technische Universität Graz1Thilo Voss合作论文数1
Johannes Roth合作论文数Institut fur Theoretische und Angewandte Physik;Universitat Stuttgart;Institut fur Theoretische und Angewandte Physik, Universitat Stuttgart1Helmut Mehrer合作论文数1R Bernd Sterzel合作论文数1H Elhor合作论文数1Wolfgang Sprengel合作论文数1
Hans Rainer Trebin合作论文数Theoretical and Applied Physics, University of Stuttgart1S. Hocker合作论文数1Max Scheffer合作论文数1
Jens-Boie Suck合作论文数1Ulrich Koschella合作论文数1Franz Gähler合作论文数1R. A. Brand合作论文数1J. Voss合作论文数1Marek Mihalkovic合作论文数Institute of Physics;Slovak Academy of Science;Institute of Physics, Slovak Academy of Science1Renate Blüher合作论文数1
