Nanoscale surface modifications have been produced on single crystal silicon and La00.7Ba0.3MnO3 thin films. Feature heights and widths were found to increase linearly with increasing tip bias voltage, humidity, and decreasing tip speed. Heights of the features on silicon ranged from 15 nm with widths of 200 – 500 nm. These results are consistent with results found in previous studies. Structures produced on MnO3 films also show a linear dependence of height and width as a function of tip voltage and speed. Heights ranged from 10 – 70 nm and widths from 400 – 2000 nm. In addition to the larger surface features, it was found that write speeds were much greater on the MnO3 films than on silicon.