Radiation-induced defects are studied in Hg1–xCdxTe crystals due to implantation of H+ (200 and 500 keV) and Ar+ (50 and 150 keV) ions. The spatial distribution of the electron concentration n(x), associated with electrical active donor defects, and the radiation damage ND(x) in the crystalline structure of the semiconductor are obtained by electrical and RBS measurements, respectively. A comparison of the profiles n(x) and ND(x) is made. It is supposed that the main factors determining the spatial distribution n(x) are, firstly, diffusion of mercury atoms from the region of maximum defect creation near Rp into the bulk and towards the surface with the subsequent sputtering of the surface, and, secondly, the formation of extended defects in the course of ion implantation. Strahlungsinduzierte Defekte in Hg1–xCdxTe-Kristallen infolge Implantation von H+-(200 und 500 keV) und Ar+-(50 und 150 keV) Ionen werden untersucht. Die räumliche Verteilung der Elektronenkonzentration n(x), die mit den elektrisch aktiven Donatordefekten verknüpft ist, und des Strahlenschadens ND(x) in der Kristallstruktur des Halbleiters werden mittels elektrischer bzw. RBS-Messungen erhalten. Ein Vergleich der Profile n(x) und ND(x) wird durchgeführt. Es wird angenommen, daß die Hauptfaktoren, die die räumliche Verteilung n(x) bestimmen, zuerst die Diffusion von Quecksilberatomen aus dem Bereich der maximalen Defektbildung in der Nähe von Rp in das Volumen und zur Oberfläche und zweitens die Bildung von ausgedehnten Defekten im Verlauf der Ionenimplantation sind.

A study has been made of defect formation in HgCdTe crystals after implantation with argon ions possessing energies of 50 and 150 keV over a wide range of radiation doses. The spatial distributions of electrically active radiation defects, measured by electrophysical methods, are compared with extended lattice imperfections, determined from Rutherford backscattering spectra. The distribution of radiation donors has been found to be shifted deeper into the semiconductor beyond the region of the interstitial impurity distribution and radiation donors have been found to be neutralized by extended lattice imperfections. The paper discusses the principal factors in the formation of the profiles of the carrier concentration distribution in the implanted cadmium telluride-mercury layer.

Amplitudes of fluctuations in the surface potential in MOS structures are studied as a function of the state of the semiconductor substrate surface, the measurement frequency, and the intensity of background illumination. It is established that the dominant noise in the depletion-weak inversion region is generation-recombination noise produced by recharging of a deep impurity in the indium antimonide surface layer. In the strong inversion region “explosive” noise may be dominant. The relationship of the latter to structural defects of the semiconductor substrate is clarified. A model is proposed for generation of “explosive” noise in MOS-structures, based on the assumption of microplasma breakdown of the space charge region with an impurity defect “atmosphere” and phase readjustments of the matrix and oxide material. It is concluded that it is possible to reduce “explosive” noise in MOS-structures.

AbstractThe electron characteristics of defects in the initial and electron irradiated Hg1−xCdxTe (2–3 MeV, 1018 cm−2, 300 K) crystals using the positron annihilation method have been investigated. The data of electric measurements are confirmed on connection of p‐type conductivity with vacancy defects of metal sublattice initial crystals Hg1−xCdxTe. An analysis of correlation curves of irradiated crystals has shown a possibility of formation of associations of initial defects and radiation damages of vacancy type during radiation process. The presence of narrow component on correlation curves in the region of small angles is associated with formation of positronium states localized in the region of radiation defect complex of vacancy type. Identification of positron‐sensitive defects with electrically active radiation induced ones has been carried out according to the results of isochronal annealing of irradiated crystals.

A study has been made of defect formation in Hg1-xCdxTe crystals after implantation with argon ions possessing energies of 50 and 150 keV over a wide range of radiation doses. The spatial distributions of electrically active radiation defects, measured by electrophysical methods, are compared with extended lattice imperfections, determined from Rutherford backscattering spectra. The distribution of radiation donors has been found to be shifted deeper into the semiconductor beyond the region of the interstitial impurity distribution and radiation donors have been found to be neutralized by extended lattice imperfections. The paper discusses the principal factors in the formation of the profiles of the carrier concentration distribution in the implanted cadmium telluride-mercury layer.

A study has been made of defect formation in Hg1−xCdxTe crystals after implantation with argon ions possessing energies of 50 and 150 keV over a wide range of radiation doses. The spatial distributions of electrically active radiation defects, measured by electrophysical methods, are compared with extended lattice imperfections, determined from Rutherford backscattering spectra. The distribution of radiation donors has been found to be shifted deeper into the semiconductor beyond the region of the interstitial impurity distribution and radiation donors have been found to be neutralized by extended lattice imperfections. The paper discusses the principal factors in the formation of the profiles of the carrier concentration distribution in the implanted cadmium telluride-mercury layer.

This paper presents a method for determining the homogeneity of dark generation in order to detect surface local generation regions. The method consists of recording the coordinate dependence of photocurrent in a nonequilibrium-depleted structure during local illumination by brief light pulses. A model is presented that can be proposed for dark generation in n-InSb MOS structures.

The problem of semiconductor polarization by the electrical field of the ring gap of a quasistatic cavity used to measure the parameters of semiconductor materials is solved. It is shown that the spatial resolution of the method is determined by the radius of the measuring orifice.

The peculiarities of defect formation in n- and p-type conductivity HgCdTe and PbSnTe crystals after electron irradiation (2 MeV, 300 K) up to 2 × 1018 cm-2 are examined. It has been found that irradiation results in formation of n-type conductivity crystals with final parameters that are determined by the composition of initial samples. The annealing of radiation defects occurs in the 360–470 K temperature range. It has been believed that the change of HgCdTe, PbSnTe properties after electron irradiation at 300 K are connected with formation of radiation defects, including Te vacancies.