An attempt is made to investigate the effects of size quantization on the effective mass in ultrathin films ofn-Cd3As2. It is found that the effective mass at the Fermi level depends on the size quantum number due to the effect of crystal-field splitting, resulting in different effective masses at the Fermi level corresponding to different electric subbands. It is also observed that the different effective masses closely approach each other, for a given film thickness, with increasing electron concentration and, for a given electron concentration, with increasing film thickness.

In the present work, an attempt is made to derive expressions for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on small-gap semiconductors under both weak and strong electric field limits in the presence of a quantizing magnetic field. It is found, taking n-channel layers on p-type InSb as examples, that the ratios show spiky oscillations with charging magnetic field, the periods of oscillations being independent of the degree of band non-parabolicity.

An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.

physica status solidi (b)Volume 103, Issue 1 p. K55-K60 Short Note Effect of Carrier Degeneracy on the Screening Length in n-Cd3As2 A. N. Chakravarti, A. N. Chakravarti Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorK. P. Ghatak, K. P. Ghatak Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorK. K. Ghosh, K. K. Ghosh Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorS. Ghosh, S. Ghosh Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorA. Dhar, A. Dhar Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this author A. N. Chakravarti, A. N. Chakravarti Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorK. P. Ghatak, K. P. Ghatak Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorK. K. Ghosh, K. K. Ghosh Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorS. Ghosh, S. Ghosh Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this authorA. Dhar, A. Dhar Institute of Radio Physics and Electronics, University College of Science and Technology, Calcutta Search for more papers by this author First published: 1 January 1981 https://doi.org/10.1002/pssb.2221030162Citations: 16 92 Acharya P.C. Road, Calcutta 700009, India. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 B. R. Nag, Electron Transport in Compound Semiconductors, Springer Series in Solid State Sciences, Vol. 11, Springer-Verlag, Heidelberg 1980. 10.1007/978-3-642-81416-7 Web of Science®Google Scholar 2 J. Rautuszkiewicz, M. Górska, and E. Kaczmarek, Physics of Narrow Gap Semiconductors, Polish Sci. Publishers, Warsaw 1978. Google Scholar 3 R. B. Dingle, Phil. Mag. 46, 831 (1955) and references cited therein. 10.1080/14786440808561235 CASWeb of Science®Google Scholar 4 A. N. Chakravarti, phys. stat. sol. (a) 25, K105 (1974). 10.1002/pssa.2210250248 Web of Science®Google Scholar 5 A. N. Chakravarti, Indian J. Pure Appl. Phys. 13, 195 (1975). Web of Science®Google Scholar 6 I. Rosenman, J. Phys. Chem. Solids 30, 1385 (1969). 10.1016/0022-3697(69)90200-5 CASWeb of Science®Google Scholar 7 M. J. Aubin, L. G. Caron, and J. P. Jay-gérin, Phys. Rev. B 15, 3872 (1977); 10.1103/PhysRevB.15.3872 CASWeb of Science®Google Scholar B 15, 3879 (1977). Web of Science®Google Scholar 8 J. P. Jay-gérin, M. J. Aubin, and L. G. Caron, Phys. Rev. B 18, 4542 (1978). 10.1103/PhysRevB.18.4542 CASWeb of Science®Google Scholar 9 F. A. P. Blom and M. J. Gelten, Phys. Rev. B 19, 2411 (1979). 10.1103/PhysRevB.19.2411 CASWeb of Science®Google Scholar 10 E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957). 10.1016/0022-3697(57)90013-6 Web of Science®Google Scholar 11 J. Bodnar, Proc. Internat. Conf. Phys. Narrow-Gap Semicond., Warsaw 1977, Polish Sci. Publishers, Warsaw 1978. Google Scholar 12 H. Kildal, Phys. Rev. B 10, 5082 (1974). 10.1103/PhysRevB.10.5082 CASWeb of Science®Google Scholar 13 F. A. P. Blom, J. W. Cremers, J. J. Neve, and M. J. Gelten, Solid State Commun. 33, 69 (1980). 10.1016/0038-1098(80)90698-5 CASWeb of Science®Google Scholar 14 P. R. Wallace, Phys. Stat. Sol. (B) 92, 49 (1979). 10.1002/pssb.2220920106 CASWeb of Science®Google Scholar 15 J. S. Blakemore, Semiconductor Statistics, Pergamon Press, London 1962. Google Scholar 16 B. R. Nag and A. N. Chakravarti, Phys. Stat. Sol. (B) 71, K45 (1975). 10.1002/pssb.2220710153 CASWeb of Science®Google Scholar 17 R. K. Pathria, Statistical Mechanics, Pergamon Press, London 1977. Google Scholar Citing Literature Volume103, Issue11 January 1981Pages K55-K60 ReferencesRelatedInformation

An attempt is made to investigate the effect of size quantization on the diffusivity-mobility ratio of the carriers in ultrathin films of semiconductors having Kane-type nonparabolic energy bands. It is shown, takingn-type InSb as an example, that the ratio oscillates both with increasing film thickness and with increasing carrier concentration under degenerate conditions and remains unaffected otherwise. The corresponding results for parabolic semiconductors are also obtained from the expressions derived.

AbstractAn attempt is made to study the dependence of the diffusivity‐mobility ratio on a quantizing magnetic field in degenerate n‐Cd3As2 in the extreme quantum limit according to the Bodnar model which has recently been shown in the literature to be the most valid model for Cd3As2. The results obtained are then compared to those derived on the basis of the Kane model since many authors have continued to use the Kane model for Cd3As2.

An expression is derived for the diffusivity-mobility ratio in degenerate narrow-gap ternary semiconductors in the presence of a quantizing magnetic field. With the help of this expression, the diffusivity-mobility ratio is shown, taking n-Hg1−xCdxTe as an example, to have an oscillatory dependence on a quantizing magnetic field. The influence of alloy composition on such dependence is also investigated.