Maxwell N. Skor, Erin L. Wonder, Masha Kocherginsky, Anju Goyal, Ben A. Hall 5 Yi Cai, and Suzanne D. Conzen 3, # 6 7 Authors’ Affiliations: Departments of Medicine, Health Studies, Ben May 8 Department for Cancer Research, Surgery, The University of Chicago, Chicago, IL 9 60637 10 11 To whom correspondence should be addressed: 12 Suzanne D. Conzen 13 Department of Medicine 14 The University of Chicago 15 900 East 59 Street, KCBD, 8240F 16 Chicago, IL 60637 USA 17 Email: sconzen@medicine.bsd.uchicago.edu 18 19 Running Title: GR antagonism in TNBC.... 20 21

Rabson-Mendenhall syndrome is a rare genetic disorder characterized by severe insulin resistance and hyperinsulinemia due to defects in signaling through the insulin receptor. Herein, we describe a new case of Rabson-Mendenhall syndrome in which investigations of the growth hormone (GH) - insulin-like growth factor (IGF) axis - reveal severe deficiencies in total and free insulin-like growth factor-I (IGF-I), IGF-II, IGF-binding protein-3 (IGFBP-3), and the acid labile subunit (ALS). Based on these findings, we anticipated significant bone deficits, as have been described in other clinical scenarios in which the IGF axis is significantly perturbed. Long-bone studies revealed no gross malformations. Paradoxically, DXA scanning revealed a total body bone density Z-score of +2.0 (0.8 gm/cm(2)), suggesting an overall high-normal BMD for age and a high BMD corrected for bone or height age. The mechanisms by which BMD is protected from severe deficiencies in the IGF-axis are unknown, yet may involve enhanced IGF sensitivity, increased local production of IGFs, and/or supra-physiological concentrations of insulin substituting for the actions of IGFs in bone.

1.3- and 1.55-mu m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs-InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 mu m) and 2.0 (for 1.55 mu m) mW single mode power at 25 degrees C, 0.6 mW single mode power at 85 degrees C and lasing operation at > 100 degrees C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-mu m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-mu m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.

After optimization of the growth conditions, 1.3- m AlGaInAs/InP VCSELs were grown on (311)A substrates and lasing operation was successfully demonstrated for the first time. Growth and device results are presented. Polarization stability was achieved.

Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.