A simple, robust but accurate method to extract the thermal resistance of BJT/HBT devices is proposed. It only needs the measured device DC I-V BJT/HBT devices, GaAs HBT, silicon BJT and SiGe HBTs. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method

A new parameter extraction methodology — local ratio evaluation is presented which is well suitable for converting one model to another. An example is given for VBIC model extraction by going through SPICE Gummel–Poon (SGP) model. It is based on the fact that VBIC model is a direct enhancement and extension of SGP model. First, the standard SGP model is extracted in the standard way. Next, SGP model parameters are directly converted to those in VBIC model. Local modifications are subsequently carried out for those parameters that are affected by different equations used in the two models. Finally, new model parameters for enhanced modeling features are introduced by evaluating the difference between measurement and simulation.

An accurate modeling of avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high injections.

A new parameter extraction methodology - local ratio evaluation is presented which is well suited for converting tone model to another. An example is given for VBIC model extraction by going through Spice Gummel-Poon (SGP) model. It is based on the fact that the VBIC model is a direct enhancement and extension of SGP model. Firstly, the standard SGP model is extracted in the standard way. Then, SGP model parameters are directly converted to VBIC model. Next, local modifications are carried out for those parameters that are affected by different equations used in the two models. Finally, new model parameters for enhanced modeling features are introduced by evaluating the difference between measurement and simulation.