The scintillation properties of two sesquioxides ceramics Lu2O3 : Eu3+ and (Lu0.5Gd0.5)2O3 : Eu3+ were studied. Both ceramics present comparable transparency and light yield whereas (Lu0.5Gd0.5)2O3 : Eu3+ showed an order of magnitude reduced afterglow in the 3–300 ms range. A thorough study of the location and behaviour of Eu3+ dopant ions at C2 and S6 sites of Lu2O3 and (Lu0.5Gd0.5)2O3 structures was carried out with low-temperature selective excitation of Eu3+. This revealed that (i) at both C2 and S6 sites, Eu3+ 4f–4f lifetime is shorter in (Lu0.5Gd0.5)2O3 : Eu3+ than in Lu2O3 : Eu3+, (ii) the host matrix (Lu0.5Gd0.5)2O3 as compared with Lu2O3 favours the location of Eu3+ at C2 site. As decay times of Eu3+ in C2 and S6 sites are 1.0 ms and 3.8 ms, respectively, the preferred occupation of C2 in (Lu0.5Gd0.5)2O3 : Eu3+ implies a much shorter decay time for (Lu0.5Gd0.5)2O3 : Eu3+ in the 3–20 ms range. Reduction of afterglow in the 20–300 ms range is illustrated by thermally stimulated luminescence peaks presenting a highly reduced intensity for (Lu0.5Gd0.5)2O3 : Eu3+ compared with Lu2O3 : Eu3+ implying reduced charge trapping defects in (Lu0.5Gd0.5)2O3 : Eu3+ ceramics.

Temperature dependent radioluminescence under X-ray excitation (XRL) and luminescence decay time measurements following 430 nm laser excitation have been performed in the 10-775 K range on Gd2O2S:Pr3+,Ce3+ scintillating ceramics. From 200 K to both low and high temperature, XRL light yield decreases by 60%. High temperature luminescence quenching has been revisited. Temperature dependent lifetime measurements imply non-radiative de-excitation mechanism at electronic defects spatially correlated to Pr3+ emitting ions. At low temperatures, decreasing XRL light yield with irradiation time is linked to very intense thermoluminescence (TL) peak around 120 K ascribed to sulfur vacancies. These traps cause efficient electron trapping which competes with the prompt recombination mechanism. (C) 2011 Elsevier B.V. All rights reserved.