Owing to its semiconducting properties (wide band gap, high electron and hole mobility), diamond is an interesting material for UV and XUV photodetection. In the present study, we have characterized UV and XUV diamond photodetector efficiency using bulk photoconductivity instead of usual coplanar devices. For comparisons, chemical vapor deposition diamond films of 200-μm thickness have been fabricated for working either in bulk configuration (BC) or surface configuration. They have been tested under nanosecond laser irradiation in the gap region (over-gap 193 and 213 nm; sub-gap 266 nm). For each wavelength, photoconductive responses of devices have been measured as a function of bias voltage (AC and DC) and laser fluences. With BC linear responses are obtained up to 0.5 mJ/cm2 at 193 nm and 40 mJ/cm2 at 266 nm. However, with BC a space charge effect appears under 193- and 213-nm irradiation, reducing the sensitivity of the detector. Such drawback is overcome by using AC bias. The suitability of the devices for detecting UV laser pulses or intense XUV fast discharge lamp is discussed.

Owing to its semiconducting properties (wide band gap, high electron and hole mobility), diamond is an interesting material for UV and XUV photodetection. In the present study, we have characterized UV and evaluated XUV diamond photodetector efficiency using volume photoconductivity instead of usual surface interdigited devices. The detectors have been tested under over-gap (13 and 193 nm) as well as sub-gap nanosecond laser irradiation (266 nm). For each wavelength, electrical characteristics of the devices have been measured as a function of bias voltage and laser fluences. The particular sandwich configuration of the detectors has shown a charge effect under over-gap irradiation. This appears by the amplitude reduction of successive pulses, and also from the different response for AC and DC bias. The suitability of these devices is discussed, the final aim being to validate bulk structures for wide band imaging devices.

Wide band gap semiconductors are discussed as materials for photonic or electron-beam controlled switches. Chemical vapour deposited (CVD) diamond has recently become the subject of intense research activity mainly due to its unique combination of thermal, mechanical and optoelectronical properties. The very high thermal conductivity, added to a high working temperature and a high dielectric strength, make CVD diamond as a promising candidate material, for high voltage electronics applications. Its semi conducting properties, such as wide band gap and high electron and hole mobilities are also noteworthy. The nature of CVD diamond is the most prominent obstacle against fabrication of any kind of electronic devices. This paper presents different grades of CVD diamond substrates and the comparison between them, especially between the natural Ha and other kind of CVD diamond. Dielectric strength investigation and surface conductivity with or without chemical treatment are presented, then the influence of the metal to diamond interface on the electronic properties have been investigated. Interdigitated planar contacts and plane back contacts have been photolithographically deposited on each sample, using different layered metals. The I(V) measurement allows to determine the optimal metallization for electronic applications. Finally, the authors investigate the response of metal-diamond-silicon components under UV illumination