We present modal gain measurements of GaNAsP multiple quantum well structures grown lattice-matched on silicon using the stripe-length method. High modal gain values of up to 100 cm−1 are observed at room temperature.

Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.