The very high radiation fluence expected at LHC (Large Hadron Collider) at CERN will induce serious changes in the electrical properties of the silicon detectors that will be used in the internal layers of the experiments (ATLAS, CMS, LHCb). To understand the influence of the fabrication technology in the radiation-induced degradation, silicon detectors were fabricated simultaneously with the three different possible technologies, P-in-N, N-in-N, and N-in-P, on standard and oxygenated float-zone silicon wafers. The diodes were irradiated with protons to fluences up to 10/sup 15/ cm/sup -2/. The measurements of the electrical characteristics, current-voltage and capacitance-voltage, are presented for the detectors manufactured with the three technologies. In terms of alpha factor (leakage current) the three technologies behave similarly. In terms of beta factor (effective doping concentration) N-in-P devices show the best performances.

This paper analyzes the stock price effect of equity issues in Switzerland. There, insiders are not legally prevented from using their information for personal trades, and security offerings are with almost no exception rights issues. Unlike what we find for a comprehensive sample of U.S. rights issues and a sample of U.S. general cash offerings, a significant majority of firms experiences a positive monthly announcement effect. The average abnormal return itself, however, is not significant. Also, we find evidence inconsistent with infinitely price-elastic demand functions for common stock, as well as some evidence that offer prices convey new information.