The III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds.This study presents an electrical characterization of InP(p)/InSb/Al2O3/ Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400 degrees K. In order to give the evolution of electrical parameters of these structures with temperature, we have realized Capacitance-Voltage measurements at high frequency for different temperatures. The found results show that there is dispersion in the accumulation region as function with temperature. The quantity of positive charges in the insulator is estimated to 1.37x10(12) atm/cm(2) at room temperature. This value decreases slightly with increasing temperature. It varies from 1.57x10(12) atm/cm(2) at 77 degrees K to 1.12x10(12) atm/cm(2) at 400 degrees K. The interface insulator/semiconductor of our samples presents a good electronical quality, the state density is equal to 4.10(11) eV(-1).cm(-2) at room temperature, this one increases from 4.7x10(10) eV(-1).cm(-2) to 7.10(11) eV(-1).cm(-2) when temperature increases from 77 degrees K to 400 degrees K.

Superscript text The III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds. This study presents an electrical characterization of InP (p) /InSb/Al 2 O 3 / Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400°K. In order to give the evolution of electrical parameters of these structures with temperature, we have realized Capacitance-Voltage measurements at high frequency for different temperatures. The found results show that there is dispersion in the accumulation region as function with temperature. The quantity of positive charges in the insulator is estimated to 1.37×10 12 atm/cm 2 at room temperature. This value decreases slightly with increasing temperature. It varies from Superscript text 1.57×10 12 atm/cm 2 at 77°K to 1.12×10 12 atm/cm 2 at 400°K. The interface insulator/semiconductor of our samples presents a good electronical quality, the state density is equal to 4.10 11 eV -1 .cm -2 at room temperature, this one increases from 4.7×10 10 eV -1 .cm -2 to 7.10 11 eV -1 .cm -2 when temperature increases from 77°K to 400°K.

The nitrides of group III metals as InN are very important materials in optoelectronic (light-emitting diodes and laser diodes) and microelectronic areas. It is essential for the realisation of such devices to grow high quality nitride single crystals. In this paper, the nitridation of InP(100) surfaces has been studied in situ using X-ray photoelectron spectroscopy (XPS). After ionic cleaning by Ar+ ions, metallic indium crystallites are created and the nitridation of the substrates is performed using a plasma glow discharge cell reaction with these indium clusters. We used the In4d and P2p core levels to monitor the chemical state of the surface and the coverage of the present species. We observed the creation of InN and PN bonds while the In–In metallic bonds decrease. This confirms the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows us to assert that we have produced almost two monolayers of indium nitride. In order to determine the quality of the elaborated nitride films and the electrical properties of the InN/InP interface we have used the I(V) electrical method. Analysis of the measured characteristics at room temperature allows the determination of the electrical parameters. The saturation current Is, the ideality factor η, and the serial resistance Rs are evaluated to 1.92×10−6A, 3.07 and 375Ω, respectively. The barrier height is determined at room temperature and is equal to 0.547eV.