The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.
We have developed growth techniques for GaN-based multilayer films suitable for low-loss optical waveguides, as well as precision patterning for integrated optics and photonic crystal structures with sub-100 nm critical features.
Vasgen Shamamian合作论文数3
jeffrey anderson合作论文数2armand rosenberg合作论文数1jeslin j wu合作论文数1Jihua Yang合作论文数1
Mijin Kim合作论文数1
Carter, Michael W.合作论文数1Rosenberg, A.合作论文数1Liptak Richard William合作论文数1
Rowe David J合作论文数Department of Mechanical Engineering, University of Minnesota1
Stephen Campbell合作论文数Department of Electrical and Computer Engineering, University of Minnesota Minneapolis;Minnesota Nano Center, University of Minnesota Minneapolis1
Charles R. Eddy合作论文数Naval Research Laboratory, Washington, DC 20375, USA1
Uwe Kortshagen合作论文数Department of Mechanical Engineering, College of Science and Engineering, University of Minnesota1Michael A. Mastro合作论文数US Naval Research Laboratory1
