In this paper, we explore the use of two organic materials that have been touted for use as photovoltaic (PV) materials: inherently conducting polymers (ICPs) and carbon nanotubes (CNTs). Due to these materials' attractive features, such as environmental stability and tunable electrical properties, our focus here is to evaluate the use of polyaniline (PANI) and single wall carbon nanotube (SWNT) films in heterojunction diode devices. The devices are characterized by electron microscopy (film morphology), current-voltage characteristics (photovoltaic behavior), and UV/visible/NIR spectroscopy (light absorption). We have found that both PANI and SWNT can be utilized as photovoltaic materials in a simple bilayer configuration with n-type Silicon: n-Si/PANI and n-Si/SWNT. It was our aim to determine how photovoltaic performance was affected utilizing both PANI and SWNT layers in multilayer devices: n-Si/PANI/SWNT and n-Si/SWNT/PANI. The short-circuit current density increased from 4.91 mA/cm(2) (n-Si/PANI) to 12.41 mA/cm(2) (n-Si/PANI/SWNT), while an increase in power conversion efficiency by ~91% was also observed. In the case of n-Si/SWNT/PANI and its corresponding device control (n-Si/SWNT), the short-circuit current density was decreased by an order of magnitude. The characteristics of the device were affected by the architecture and the findings have been attributed to the more effective transport of holes from the PANI to SWNT and less effective transport of holes from PANI to SWNT in the respective multilayer devices.

A simple and easily processible photovoltaic device has been developed based on boron-doped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The SWNTs were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis, transmission electron microscopy, and x-ray photoelectron spectroscopy. The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection, and transportation while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

In this work we have reported low cost solar cells which can be processed to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques. We have synthesized single wall carbon nanotubes (SWNTs) by catalytic Chemical Vapor Deposition (cCVD) method, which were subsequently doped with boron for photovoltaic applications. The carbon nanotubes were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). The solar cell devices were fabricated by depositing a uniform dispersion of b-SWNT films on n-Si creating numerous heterojunctions. These studies are the first in which b-SWNTs have been utilized directly for photo-generation.