Recent developments in quantum electronics, particularly spin-qubit systems and semiconductor spintronics, provide new applications for micromagnets. The stray field of properly placed micromagnets can be employed to manipulate spin-qubits using rf-signals. Micromagnets are used as the injector and detector contacts in semiconductor spintronics. For both applications, single-domain magnets with precisely known magnetic properties, with and without external field, are required. We report on Fe micromagnets with different aspect ratio, fabricated using standard semiconductor processing technology. We describe a simple setup using a custom-built electromagnet and conventional atomic force microscope to characterize the micromagnets in an external magnetic field using magnetic force microscopy (MFM). We use this setup to characterize the fabricated micromagnets' domain structure and switching behaviour. We show that MFM, together with the custom-built electromagnet is a simple, yet versatile method to characterize micromagnets for applications in quantum electronics. We furthermore show that the fabricated micromagnets all exhibit the desired single-domain state. The micromagnets differ in their coercive field, depending on the aspect ratio. This makes these micromagnets suitable for spin-injection and spin-detection.

We demonstrate that microwave absorption experiments offer a route for efficient measurements of transport properties for fast and accurate quality control of graphene. This conctactless characterization method can be used to quickly evaluate transport properties over large areas without recourse to complex lithographic methods making it suitable as a probe of quality during wafer scale fabrication. In particular, we demonstrate that absorption measurement of transport properties is sensitive to inhomogeneities in sample transport properties. This is in contrast to traditional methods using electrical contacts which tend to overestimate transport properties due to the formation of preferential conducting channels between the electrodes. Here we compare Shubnikov-de Haas oscillations simultaneously detected by microwave absorption and by conventional contact Hall bar measurements in fields up to 15 Ton quasi-free standing, large area (approximate to 25 mm(2)) monolayer graphene. We find that although the evaluated charge carrier densities from both measurements are similar, the mobility differs considerably due to electronic transport inhomogeneity.

Electron paramagnetic resonance (EPR) is a powerful technique to investigate the electronic and magnetic properties of a wide range of materials. We present the first combined terahertz (THz) field and frequency domain electron paramagnetic resonance (HFEPR/FDMR) spectrometer designed to investigate the electronic structure and magnetic properties of molecular systems, thin films and solid state materials in a very broad frequency range of 85-1100 GHz. In this paper, we show high resolution frequency-field (Zeeman) maps (170-380 GHz by 0-15 T) recorded on two single-molecule magnets, [Mn2(saltmen)2(ReO4)2] and [Mn2(salpn)2(H2O)2](ClO4)2, which give direct access to the field-dependence of the energy level diagram. Furthermore, supression of standing waves in the described system and the sensitivity in field and frequency domain operations is evaluated and discussed.

We report field-dependent magnetization measurements on monolayers of [Dy(Pc)(2)] on quartz, prepared by the Langmuir-Blodgett technique. The films are thoroughly characterized by means of X-ray reflectivity and atomic force microscopy. The magnetisation of the sample is measured through the magnetic circular dichroism of a ligand-based electronic transition.