Auger Electron spectroscopy was used to study electron-stimulated oxidation (ESO) of SiC. The rate of oxidation was investigated as a function of electron-beam exposure (on and off), primary electron-beam energy (3–6keV), electron-beam current (25–500nA) and total chamber pressure. The oxidation rate correlated with overall chamber pressure rather than the partial pressure of H2O, CO or CO2 alone. The rate decreased as the primary-beam voltage Ep was increased. The oxidation rate increased as the primary-beam current was increased at higher pressures (2.2×10−7Torr). Oxidation did not occur in the absence of the electron beam.

In metalization work, controlled semiconductor surfaces and interfaces are necessary. Trace impurities such as carbon and oxygen at the metal/semiconductor interface may improve or degrade the electrical characteristics of a desired contact. In this study, Auger Electron Spectroscopy (AES) was used to investigate electron stimulated oxidation (ESO) of SiC. The research focused on chamber conditions necessary to prevent oxide formation on SiC surfaces during thin film metal deposition. Oxidation rate was studied as a function of beam exposure ton and off), primary electron beam energy, E-p, (3-6 keV), electron beam current, I-p, (25-500 nA), and total chamber pressure. Oxidation rate had a stronger correlation to overall chamber pressure rather than the partial pressure of H2O, CO, or CO2 alone. Oxidation rate decreased slightly as E-p was increased. Rate of oxidation increased at higher pressures (2.2 x 10(-7) Torr) with respect to I-p but was nearly independent of I-p at lower pressures (7.1 x 10-9 Torr). No oxide growth was detectable to AES in the absence of exposure to the electron beam.

A tritium solid breeder irradiation experiment was designed and fabricated. The irradiation is intended to reach a goal exposure of 600 full power days in the fast neutron flux of the EBR-II reactor in order to obtain swelling, tritium retention, and stability data. Lithium ceramic pellets, spheres and single crystals from Europe, Japan and the USA are contained within 19 closed capsules. Burn-up levels from 10 to 35 × 1020 captures/cc will be obtained during this irradiation at “isothermal” temperatures on 1 cm diameter pellets from approximately 500 to 900°C. Larger diameter pellets (1.6 to 2.3 cm) will produce large temperature gradients and centerline temperatures of over 1200°C. Characterization of these materials provided an assessment of current fabrication capabilities which exist for these materials.