Antibody-functionalized, Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN∕GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng∕ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN∕GaN HEMTs for botulinum toxin detection.
A. Dabiran合作论文数1Peter Chow合作论文数1
Stephen J. Pearton合作论文数Department of Materials Science and Engineering, Herbert Wertheim College of Engineering, University of Florida1
Kuei-Hsien Chen (陳貴賢)合作论文数Institute of Atomic and Molecular Sciences, Academia Sinica;Center for Condensed Matter Sciences, National Taiwan University1
Fan Ren (任方)合作论文数Department of Chemical Engineering, Herbert Wertheim College of Engineering, University of Florida1
Jason Ramage合作论文数1
Yu-Lin Wang合作论文数Department of Chemical Engineering, University of Florida1Chihyang Chang合作论文数1Yiider Tseng合作论文数Department of Chemical and Biomolecular Engineering;Johns Hopkins University;Department of Chemical and Biomolecular Engineering, Johns Hopkins University1
Byung-Hwan Chu合作论文数Department of Chemical Engineering, University of Florida1
