We describe a transceiver chip which can perform full-duplex operation alternatively in the 1.3 μm (TX)/1.5 μm (RX) or 1.5 μm (TX)/1.3 μm (RX) mode. A full duplex sensitivity of -28.4 dBm is reported for the transceiver mode emitting at 1.55 μm and receiving at 1.3 μm.

In-line transceiver chip emitting at 1.3 mu m and receiving at 1.55 mu m is described regarding the crosstalk occurring between the 1.3-mu m laser and the 1.55-mu m integrated photodiode. Contribution of optical and electrical crosstalk to the overall crosstalk is measured and discussed. Techniques to overcome the crosstalk are proposed and demonstrated by showing the feasibility of system compatible diplex sensitivities.

Simultaneous emission and reception have been demonstrated with an in-line-type transceiver emitting al 1.3 mu m and receiving at 1.55 mu m. A receiver sensitivity of -14.6 dBm is reported at 68 Mbit/s by modulating the 1.3 mu m laser simultaneously at 50 Mbit/s. The power penalty caused by the modulation was 7.4 dB.

A new approach using a cap-annealing partial disordering technique is demonstrated for 1.55-mu m multiple-quantum-well (MQW) distributed feedback (DFB) laser-external electroabsorption modulator monolithic integration, Good static performances of the light source (15 mA threshold current, 14-dB on-off ratio for a 4-V voltage swing) are reported using this technique that preserves the material optical and electrical quality.

Using GaAs-on-InP heteroepitaxial technology, a 1.3 mum OEIC transmitter combining a BRS laser with two GaAs metal-semiconductor field-effect-transistors has been fabricated. The device design, fabrication processing and performance are described. 8 Gbit/s NRZ direct modulation is demonstrated. This is the highest bit rate ever reported for GaInAsP laser GaAs-on-InP transistor circuits.

We introduce a new concept for gratings, based on a spatial carrier modulation, induced by current for optoelectronic devices. The concept is experimentally tested on gain coupled lasers, showing predicted features as high-power, low-linewidth, and length-independent coupling length product. >

We investigated the potentiality of a phosphorus-doped silicon oxide (SiO:P) carrier-free disordering source for applications in photonic devices integration schemes. This is accomplished in three successive steps by employing an InGaAsP/InGaAsP structure with compressively strained wells and lattice-matched barriers designed for operation around ∼1.55 μm. First of all, we showed that the SiO:P encapsulant offers a good control over a wide range of disorder (blue shifts as high as ∼150 meV). Later on, the high optical quality of the disordered regions is demonstrated by detecting 300 K excitonic features in moderately blue-shifted (∼40 meV) samples. And, finally, a first attempt of its application in integration technology is made by realizing a monolithic composite of a distributed feedback laser and a quantum-confined stark effect electroabsorption modulator operating around 1.54 μm.

Selective area epitaxy can be easily obtained at atmospheric pressure conditions by introducing a compound preventing nucleation on the masked areas or by choosing a proper set of mask size. These two approaches have been investigated and conclusions have been made on a laser and waveguide integration realisation

The continuous tuning range of a three-section DFB amplifier-filter with a passive centre section can be strongly enhanced by combining the carrier-induced Bragg wavelength shift with the conventional wavelength shift due to the phase shift between the two lateral gain sections. This principle is demonstrated by the fabrication of filters exhibiting a nearly constant gain of 15dB as well as a 4GHz filtering bandwidth over a 2.2nm continuous tuning range.

The design of high bandwidth high efficiency 2 section MQW DFB lasers has been performed. 18 GHz FM bandwidth DFB lasers with FM efficiency of 1.5 GHz/mA are successfully achieved, which represents to our knowledge the highest FM efficiency compatible with >10 Gbit/s high-speed modulation rate reported for 1.5 μm DFB lasers

Summary form only given. The aim of the paper is to show the impact of the modal gain saturation on the tuning-range as well as the tuning rate of three-contact DFB lasers (and filters) at single current modulation. Taking into account the modal gain saturation due to gain-curve-shift, we have demonstrated theoretically and experimentally the feasibility of a wide wavelength tuning (2.5 nm) and a high tuning rate with a small power change by single (lateral) current tuning in the case of three-contact DFB lasers and filters

A 20 GHz bandwidth VUG (V-on-U groove) DFB GaInAsP laser based on a zero net strain quaternary quantum well active structure grown at a constant phosphorus/arsenic ratio is described. The active structure is designed such that emission wavelength has excellent thermal stability in order to avoid gain peak shifts during two epitaxial regrowths. Using this active material, the Letter shows that high-performance high-speed DFB devices can be designed and fabricated.

The reassignment of optical data packets to wavelengths varying from packet to packet permits the design of advanced photonicswitching node architectures. For fast ATM packet switching, the use of an optical-fiber-loop buffer with multiple-wavelength access to avoid packet contention has been proposed (this approach is currently being developed in the European Project RACE 2039 ATMOS).1 requiring dynamic wavelength reassignment to the input packets. We demonstrated this function in an all-optical implementation by using gain saturation in a semiconductor optical amplifier (SOA) to obtain wavelength conversion2,3 and by using carrier switching in a step-tunable multisection distributed-Bragg-reflector (MSDBR) laser to obtain wavelength switching.