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Singapore’s new Green or Rail Corridor created on the site of the former Keretapi Tanah Meleyu (KTM) rail line resembles influential global models like Manhattan’s repurposed elevated rail line park, High Line. In fact, the roots of the Green Corridor are more properly located in Singapore’s planning and nature conservancy traditions going back decades. The straight-line dimensions and, by Singaporean standards, less manicured appearance of the Green Corridor enables this green space to capture the human and natural diversity and complexity of an urban setting better known for its uniform standards and “master plans.” In the process opportunities have opened up for partnerships between state and civil society in the planning process.

Thermal nanoimprint of roll to roll technology for DVD (t = 0.6 mm) media realized fast 8 discs/s process and a new platen film nanoimprint process with stamper cooling method resolved the film shrinkage issue. The speed is as fast as 1 s and the film thickness is 75 mu m. Dual layer Blu-Ray based disk of injection mold (t = 1.1 mm) L0 layer and nanoimprinted (t = 75 mu m) L1 layer shows signal jitter around 6.0% high quality characteristics.

Journal Article Fung Chi Ming. Reluctant Heroes: Rickshaw Pullers in Hong Kong and Canton, 1874-1954. (Royal Asiatic Society Hong Kong Studies Series.) Hong Kong: Hong Kong University Press. 2005. Pp. xx, 216. $49.50 Get access Fung Chi Ming. Reluctant Heroes: Rickshaw Pullers in Hong Kong and Canton, 1874–1954. (Royal Asiatic Society Hong Kong Studies Series.)Hong Kong: Hong Kong University Press. 2005. Pp. xx, 216. $49.50. David Strand David Strand Dickinson College Search for other works by this author on: Oxford Academic Google Scholar The American Historical Review, Volume 112, Issue 3, June 2007, Page 830, https://doi.org/10.1086/ahr.112.3.830 Published: 01 June 2007

The large differences in electrical conductivity and optical reffectivity between the crystalline and amorphous phases of some chalcogenide alloys are used for storing and reading information in Ovonic memory devices. In this paper we present data for a hybrid chalcogenide device that can be programmed with an electric pulse and read optically or vice versa. Such a device could be used for building an hybrid Ovonic cognitive computer or to speed up the operation of a conventional computer as operations induced electrically in one location could be read and transferred optically to another. (c) 2006 Elsevier B.V. All rights reserved.

Ovshinsky's pioneering work and inventions in amorphous chalcogenide semiconductor materials in the 1960s invigorated an entire field of physics. The electronic switching he first demonstrated has led to many things, including what many refer to generically as phase change technology. These Ovonic chalcogenide materials are now used, in several kinds of devices, primarily optical and electrical storage. The applications are growing, fueled in part by the successes gained in the first applications and also by market opportunities and demands. The remarkable properties of these materials and the underlying physics opened up these commercialization possibilities, but significant engineering including the materials themselves, but more so of the device structures, has provided for the consistent properties of the products. We present a review of the many device and engineering aspects which have led to so many applications.

Eutectic-based InSbTe phase-change materials have been developed for low sigma-to-dynamic range (SDR) multi-level (ML) performance at linear track velocities (LTVs) of 1.9 m/s to 6 m/s. Compositions with the stoichiometry Inx(Sb72Te28)100-x (3.9<x<45) were tested. Compositions that achieved low SDRs did so at 1.9 m/s, 3.5 m/s and 6 m/s. We found two minima in the SDR at concentrations of x=10% and x=30% indium. We explain this unique finding through write-erase characteristics and crystal structure. At indium concentrations lower than 10% and higher than 30%, the favored rhombohedral crystal structure was not the major phase formed, and the SDR increased. The minima in SDR at 10% and 30%, in conjunction with a maximum at 20%, can be explained by fast solid-state crystallization time and slow melt recrystallization time.

Phase change materials, originally invented by S.R. Ovshinsky, are used in the leading standardized rewriteable optical storage products. GeSbTe was introduced as a high speed switching material with good cycling characteristics. AgInSbTe was originally developed for lower speed applications. These two materials systems have both differences and similarities. We compare the structural and dynamic write aspects of GeSbTe and AgInSbTe. We find the crystal structures of both systems to be simple, high-symmetry structures with low amorphous backgrounds. Under dynamic test conditions, GeSbTe crystallizes with bulk nucleation dominant behavior. At low speeds, AgInSbTe crystallizes with an edge growth mechanism but switches to bulk nucleation at high speeds. We find that in decreasing the laser spot size, there does not appear to be an improvement in erase or erase speed.