SBIR's family of MIRAGE infrared scene projection systems is undergoing significant growth and expansion. The first two lots of production IR emitters have completed fabrication at Microelectronics Center of North Carolina/Research and Development Institute (MCNC-RDI), and the next round(s) of emitter production has begun. These latest emitter arrays support programs such as Large Format Resistive Array (LFRA), Optimized Array for Space-based Infrared Simulation (OASIS), MIRAGE 1.5, and MIRAGE II. We present the latest performance data on emitters fabricated at MCNC-RDI, plus integrated system performance on recently completed IRSP systems. Teamed with FLIR Systems/Indigo Operations, SBIR and the Tri-Services IRSP Working Group have completed development of the CMOS Read-In Integrated Circuit (RIIC) portion of the Wide Format Resistive Array (WFRA) program-to extend LFRA performance to a 768 x 1536 "wide screen" projection configuration. WFRA RIIC architecture and performance is presented. Finally, we summarize development of the LFRA Digital Emitter Engine (DEE) and OASIS cryogenic package assemblies, the next-generation Command & Control Electronics (C&CE).

This article gives an overview of fabrication and performance of a class of vacuum microelectronic devices, namely, silicon tip-on-post field emitter arrays (FEAs). Experimental data illustrating the device performance are presented in the context of requirements for field emission flat panel display and microwave power amplifier applications. Critical geometrical parameters of the device are discussed, and a fabrication process flow designed to optimize these parameters is described. Equipment and methods for testing electrical performance of the FEAs and results thus generated are presented. Specifically, emission current versus gate voltage characteristics for arrays with tips formed using anisotropic (crystallographic–orientation–dependent) or isotropic etching techniques, uniformity of these characteristics across a 4 in. diameter substrate, stability of emission current in ultrahigh vacuum conditions, and changes in emission current upon exposure to active gases at varying pressure are discussed.

Results of beam collimation experiments on linear field-emitter arrays with linear planar lenses are summarized. The electron beam is imaged on a phosphor screen. In general, as lens voltage is reduced relative to the gate voltage, the elliptically shaped screen images narrow, becoming fine lines with emission currents showing only modest reductions. This reduction of emission current can be overcome by increasing the gate voltage only a few volts without affecting beam collimation. As the lens voltage is reduced, screen current decreases relative to emission current while gate current increases, indicating that some emitted electrons in this linear lens geometry cannot propagate to the anode screen. Experimental data and qualitative modeling are in fair agreement.

In this article, simulation, fabrication, and direct current (dc) characterization data are presented for column-based silicon field emitter array (FEA) devices, made using anisotropic or isotropic etching of silicon to form emitter tips. In the design of the fabrication process, we have attempted to minimize spatial nonuniformity of process parameters affecting the geometry of the device structure, and, where possible, counteract the nonuniformity through a proper choice of processing variables. FEA devices, with as many as 232 630 tips, on 4–10 μm centers, have been successfully fabricated. The highest electron emission current measured was over 18 mA at the gate voltage of 150 V for a 6648 tip array.

IFAs are MEMS actuators which are powered by the electrostatic forces between the plates of many microscopic deformable capacitors arranged in monolithic arrays. IFAs are fabricated using standard techniques of VLSI electronics. The IFAs reported here resemble thin, flexible plastic membranes 10 mm long and either 1 or 3 mm wide, which contain from 75,000 to 200,000 cells. They are low-weight, high-efficiency actuators with low power consumption, silent operation, and absence of sliding friction. Testing methods applicable to these free- standing MEMS structures are discussed, along with experimental observations and measurements of forces and displacements. We have measured forces in excess of 6 dynes and displacements of over 700 micrometers . The force/cross-sectional area of this MEMS structure is 2800 dynes/mm2, and the work done by the IFA divided by its volume is in excess of 7 ergs/mm3. A rate over 20,000 contractions/second has been observed, as well as lifetimes of greater than 108 contractions. The metalization of the IFA strongly affects the performance. Experimental results are presented demonstrating the improvements in the performance with a Cr/Au metal system compared to the Cr/Pd metal system originally used.

We have succeeded in developing encapsulated silicon-vacuum field-emission transistors by using integrated circuit technology. This success will accelerate the development of integrated circuit of silicon-vacuum field-emission devices. Preliminary electrical characteristics of these encapsulated silicon-vacuum field-emission transistors show very similar characteristics to the gated field-emitter diode. However, the turn-on voltage and the transconductance are lower compared to the open gated field emitters.