Optoelectronic Integrated Circuit (OEIC) receivers have been demonstrated for analog rf-photonic links. The photodetector and preamplifier are both based on the same InGaAs/InAlAs/InP heterojunction bipolar transistor structure. On-chip AC-coupling filters accommodate links having low modulation depths. The receivers operate in 1-6 GHz and 2-18 GHz bands.

A wideband, optoelectronic receiver array has been demonstrated for analogue photonic links. Each receiver channel consists of a pin photodetector that is AC-coupled to an HBT transimpedance amplifier. The receivers have a 1.2-18 GHz operation band and a large dynamic range.

Silicon waferboard technology based on etched and deposited passive-alignment features has been applied to the fabrication of optoelectronic transmitter and receiver arrays for rf applications. Using silicon waferboards, we have aligned both 1 by 4 buried-heterostructure laser arrays and 1 by 4 PIN photodetector arrays to optical fiber ribbons. Besides serving as mechanical carriers and alignment guides, the silicon wafers can also be used as rf or microwave substrates. We introduce rf-optoelectronic receiver arrays based on such enhanced silicon waferboards.

Hybrid integration utilizing silicon waferboard as a platform for mounting discrete and array components, is an attractive alternative to using conventional sub-mounted devices when building low-cost, high-performance, multichannel optical transmitter and receiver modules. Silicon substrates are extremely versadle as a platform material for the following reasons: 1) both multimode and single mode fiber can be mounted into v-grooves etched into the silicon surface; 2) alignment fiduciaU formed on the silicon surface, provide a registration feature for optoelectronic devices such as emitters and detectors; 3) signal traces can be defined using conventional photo-lithography techniques on a common silicon substrate; one that carries the components as well as the optical fibers; and 4), heat can be efficiently transported away from the active devices mounted on the silicon surface through die silicon platform.

Optoelectronic receiver arrays have been developed for analog radio-frequency photonic links. The monolithic optoelectronic integrated circuits contain photodetectors and transimpedance preamplifiers that are based on InGaAs/InAlAs/InP heterojunction bipolar transistors. These receivers also contain on-chip DC-blocking filters and impedance-matching circuits, as needed for analog applications. Some receivers accommodate signals greater than 18 GHz and others have effective responsivities greater than 11 A/W. Receivers having separate chips of photodetector arrays and transimpedance amplifier arrays have also been developed. The photodetector arrays are passively aligned to optical fibers by means of silicon carriers.

This paper describes the development of laser transmitter arrays for analog optoelectronic link applications up to 2 GHz. These modules have been developed in an attempt to utilize passive assembly and alignment operations for the purpose of reducing costs. To this end, silicon waferboard integration platforms and semiconductor laser arrays have been fabricated with special alignment features that allow passive assembly of flip-chip laser arrays to single-mode optical fiber arrays.

This paper describes the packaging challenges associated with array-based transmitters and receivers used for analog fiber-optic links. The optoelectronic modules are being developed under an ARPA Analog Optoelectronic Module TRP. The paper will focus on the development of optoelectronic array modules using silicon waferboard technology for application to personal communication systems

We compare the GaAs and Silica-based approaches for realizing integrated time-shift networks. The performance of a fully functional 2-cm X 2-cm monolithic GaAs circuit is reviewed in detail. In addition, we describe the design of an optoelectronic- switched network that uses Silica-based star-couplers and waveguide arrays.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.