We propose and experimentally demonstrate a multi-wavelength differential coherent vibration (MDCV) measurement scheme using a monolithically integrated Fabry-Pérot mode-locked laser diode (FP-MLLD). The scheme leverages multiple mutually coherent laser modes generated from a single FP-MLLD to form multiple probing pairs, enabling multi-channel coherent detection. In the time domain, the probing and reference signals exhibit a short-pulse waveform, which delivers higher peak power and signal-to-noise ratio (SNR) compared to continuous-wave or dual-wavelength sine-wave schemes. Experimental results show that the proposed system achieves vibration frequency measurement over a range of 5 Hz to 800 Hz with an SNR of ∼20 dB. Multi-channel measurement capability is validated via three spectrally filtered wavelength channels, all of which accurately resolve the target vibration frequency. This scheme features a simplified architecture, low cost, and native multi-channel capability, showing potential for multi-target or multi-directional vibration measurement applications.

This work first establishes an 8-channel four pulse amplitude modulation (PAM-4) intensity modulation direct detection (IM-DD) optoelectronic transceiver system, with cascaded silicon Mach-Zehnder interferometer (MZI) lattice-filter technology, for high-speed and long reach (LR) (over 10 km) transmission scenario of modern data center interconnection (DCI). The compact silicon photonic (SiPh) traveling wave Mach-Zehnder modulators (TW-MZM) and silicon-germanium (SiGe) photodetectors (PD) (bandwidth > 49.5 GHz with a responsivity > 0.8 A/W) are homogeneously integrated with MZI lattice-filter based 8x 1multiplexer (MUX) and 1x8 demultiplexer (DeMUX), respectively, endowing the system with compact structure and tunable operating wavelengths. Finally, the novel SiPh transceiver system is elaborately integrated and applied into the local area network wavelength division multiplexing (LAN-WDM) LR8 circumstance, transmitting over 10 km standard single mode fiber (SSMF), with broad bandwidth (> 33 GHz), good channel response uniformity, and supports over 100 Gbps per lane for high-speed transmission, featuring proper system bit error rate (BER) performance in compliance with IEEE 802.3 standards.

An ultra-compact 1310/1550 nm wavelength division (de)multiplexer based on a channel-shaped multimode interference structure was proposed and fabricated on an InP platform. The device has been simulated and optimized with a low insertion loss of 0.1 dB at 1310 nm wavelength and 0.33 dB at 1550 nm wavelength. The device features a notably compact footprint with an MMI region just 48 μm in length. Measurements revealed extinction ratios of 7.1 dB at 1310 nm and 5.9 dB at 1550 nm, accompanied by insertion losses of 7.07 dB and 3.03 dB for these wavelengths.

A multiwavelength coherent vibration measurement scheme using a mode-locked laser diode is demonstrated. Non-contact measurement of a 40-Hz vibrating target is successfully achieved.

We report a monolithically integrated four-channel TEML array operating in the 1.5 μm wavelength band. At 25 °C, each channel offers independent wavelength tunability with a simple tuning method, while maintaining excellent single-mode performance. The device features a bandwidth exceeding 26 GHz per channel and supports 50 Gb/s NRZ modulation, making it a simple and efficient low-cost light source for Wavelength Division Multiplexing applications.

In this letter, we report transmissions of 100 Gb/s PAM4 data using a low-cost high bandwidth directly modulated 1.3 mu m distributed feedback (DFB) laser. In the device, a passive distributed Bragg reflector (DBR) section is integrated, which leads to a 29 GHz modulation bandwidth at 20 degrees C. The DFB and DBR sections of the device have the same InGaAlAs multi-quantum wells (MQWs). This simplifies the device fabrication process notably, which is similar to a conventional DFB laser. At 20 degrees C, the threshold current of the device is 14 mA and the maximum optical power for the laser is larger than 16 mW. At 100 Gb/s PAM4 data modulation, clear eye diagrams have been obtained for back-to-back and up to 40 km single mode fiber transmissions.

We proposed and demonstrated a novel compact triplexer of O-S-L band based on channel-shaped MMI coupler, designed for 50G PON systems, with a total length of 457 mu m.

We demonstrated a high-power and low-timing jitter monolithically integrated DBR AlGaInAs/InP mode-locked semiconductor laser with a repetition frequency of 25 GHz. The optical output is 74 mW and timing jitter is 42 fs (integrated from 1 kHz to 10 MHz).

We report our study to optimize the growth of mid-wavelength InAs/InAsSb nBn infrared detectors through interface control method with AlSb/AlAs superlattices as electron barrier. The dark current model was employed to investigate the dominant dark current mechanism at various operating temperatures. We extracted the minority carrier lifetime of InAs/InAsSb material grown by different interface growth methods. Electrical and optical characterizations indicated superior performance of the device grown by migration-enhanced epitaxy (MEE) with a 3 s As and Sb soak time. With-0.3 V applied bias and 150 K operating temperature, the optimal device shown a dark current density of 8.95 x 10-6 A/cm2 and peak specific detectivity of 7.12 x 1011 cm Hz1/2/ W at 3.8 mu m.

We report a high-power multiple wavelengths distributed feedback (DFB) diode laser array chip for generating continuously tunable terahertz (THz) signals. Each laser within this laser array chip outputs a single-mode output power of up to 90 mW, with a maximum single-mode output power exceeding 120 mW, and the narrowest linewidth is 32.6 kHz. By employing optical heterodyne approach using a commercial uni-traveling-carrier photodiode (UTC-PD), we demonstrated a continuously room temperature tunable THz signal output spanning frequency range of 0.075 THz to 2.63 THz. Our high-power multiple-wavelengths DFB diode laser array chip has achieved a record continuously tunable range with high power and narrow linewidth, providing a high-power, low-cost, and compact photonic chip solution for room temperature continuously tunable terahertz sources.