The incorporation and doping process of Si, S and Zn impurities in InP by metalorganic vapor phase epitaxy have been studied both in standard growth conditions (SGC) and in selective area growth (SAG) conditions using silane (SiH4), hydrogen sulphide (H2S) and diethylzinc (DEZn). It was observed that in SGC, the dopant species behaviour, for two different growth rates, is in line with the expectations from the model and some previous reports made on doped GaAs and InP. On the other hand, in SAG conditions, the Si concentration was unexpectedly independent of the growth rate. Furthermore, the Zn and S codoping shows a Zn dopant concentration enhancement in SAG conditions, while it remains constant in SGC. These differences in behaviour are induced by the addition of dopant species transported by lateral vapour phase diffusion from the patterned region to the open region.

A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers, showing a reduction of the structure capacitance with no degradation of the threshold current nor of the external efficiency.

This article demonstrates the application of highly efficient Fabry-Perot lasers to intra-office STM-16 fiber communication systems at the wavelength of 1.3 mum. Low power penalty of 0.05dB through a 12ps/nm fiber was measured at 25 degreesC and 85 degreesC. A low coupling loss of 1dB of a laser to a cleaved SMF fiber is achieved. This device consists of an active stripe followed by a passive intracavity spot size converter. Subsequently, this paper demonstrates the feasibility of non-perturbing intracavity tapers through the application of selective area growth and their applicability to short haul optical systems.

A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers. A reduction of the structure under both forward and reverse bias is obtained, with no degradation of the optical properties of the source