This paper presents recent development conducted in the area of RF packaging and interconnect technologies. An original concept of 3D silicon packaging including collective wiring process is proposed and applied to the design of an X-band T/R module demonstrator. An RF solder-less interconnect based on the CIN::APSE connecting system (CINCH ) has been developed to address the need of vertical transition in new generation of SAR active antenna.

The development of active antennas for space applications, and more particularly for constellations, has reinforced the need for R.F. BFNs - Beam Forming Networks. A transmit BFN connects M R.F. inputs to N R.F. Outputs to form N independent and simultaneous beams. The resulting matrix has MxN infernal connections. Typically, this number runs into the hundreds that make if impossible to implement with classical connectors.A configuration using a full ceramic MCM-C module on a multilayer printed circuit board, with more than a hundred of resistors in the internal layers, has been studied and manufactured This gives a mass of 16 grams for each point of connection in comparison with the 35 grams obtained with classical single layer structures. All the parts are working up to 14 GHz.One of the most important innovations was to implement all the DC and command signal (L.F.) connections on the backside of the MCM. A global assembly system has also been developed to bond the MCMs (12 on each side) to the board. In a single operation, the mechanical attachment and the L.F. connections are achieved. Then, only the high frequency connections are ribbon bonded; thus minimising the number of operations.This configuration is going to be qualified for space applications.

This paper describes the realization of gain and phase control function in GaAs microwave monolithic integrated circuit (mmic.). The measured performances are successfully compared with simulation results. The attenuator uses a dual-gatefet in order to adjust the level of the transmitted signal. The obtained dynamic range is 27 dB. The phase-shifter is made up of T and π networks connected in series and makes use of the capacitance variation of Schottky diodes to change the transmission phase. The phase shift reaches 115° at its maximum. Both circuits have been developed for a C-band beam forming network project for space communications.