A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.
M Ingvarson合作论文数1
Tahereh Arezoo Emadi合作论文数Dept. of Electr. &Comput. Eng., Univ. of Manitoba;c;Dept. of Electr. & Comput. Eng., Univ. of Manitoba1Arne Oistein Olsen合作论文数1
Tomas Bryllert合作论文数Department of Microtechnology and Nanoscience, Chalmers University of Technology1
Jan Stake合作论文数Microwave Electronics Laboratory;Chalmers University of Technology;Microwave Electronics Laboratory, Chalmers University of Technology1
Josip Vukusic合作论文数Department of Microtechnology and Nanoscience;Chalmers University of Technology;Department of Microtechnology and Nanoscience, Chalmers University of Technology1
