We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy. A time-resolved Kerr rotation microscope with \ensuremath{\sim}1 \ensuremath{\mu}m spatial resolution uses electron spin precession to directly image the GaAs nuclear polarization. These measurements indicate that the polarization varies from a maximum under magnetic mesas to zero several microns from the mesa perimeter, resulting in large $(\ensuremath{\sim}{10}^{4}\mathrm{T}/\mathrm{m})$ effective field gradients. The results reveal a flexible scheme for lateral engineering of spin-dependent energy landscapes in the solid state.
Arthur Gossard合作论文数College of Engineering, University of California, Santa Barbara1
J. Stephens合作论文数1
Micah P. Hanson合作论文数Materials Department;University of California , Santa Barbara;Materials Department, University of California , Santa Barbara1R. K. Kawakami合作论文数1
Jesse Berezovsky合作论文数Center for Spintronics and Quantum Computation;University of California , Santa Barbara;Center for Spintronics and Quantum Computation, University of California , Santa Barbara1
