Diversified Technologies, Inc. (DTI) designed and built a 600 kVDC, 150 mA Multiplier Power Supply (MPS) for Brookhaven National Laboratory (BNL). DTI's design met the defined MPS specifications and proposed performance values for the High Voltage Power Supply (HVPS). The system is comprised of a Multiplier Assembly, Pressure Vessel, Inverter Assembly, Cooling Manifold / Flow Sensors and Control / Monitoring System. The high voltage is generated by a 50 kV AC inverter feeding a 12-stage Cockcroft-Walton multiplier, regulated by high-speed analog control loops for stability and precision. The bleeder resistors and diode boards are located adjacent to the associated capacitors. Each logical diode is 8 series connected, 12 kV modules. An independent voltage divider stack, consisting of combined resistor and resistor-capacitor network designed for good high frequency response, is located near the voltage multiplier stack. This custom voltage feedback is crucial to accomplishing the high precision specifications of 1% accuracy 0.16% droop at full voltage and full load. All the high voltage parts are enclosed in the pressure vessel, capable of withstanding up to 90 PSI N2, nominally operating at 75 PSI. The pressure vessel encloses the multiplier stack and the high voltage divider network.

Polarized electrons play an important role in high-energy and nuclear physics, and their properties have also been exploited in ultrafast electron microscopy. Currently, gallium arsenide crystals illuminated by circular polarized infrared laser light are commonly used for generating polarized electrons. However, the achievable accelerating voltage and the gradient of these electrostatic sources limit the beam quality and quantity. A solution could be to combine gallium arsenide photocathodes with radio-frequency electron guns, which are capable of accelerating beams with significantly higher gradients and voltage. Here we report the successful operation of a gallium arsenide photocathode in a superconducting radio-frequency gun. Our findings are relevant for future sources of polarized electrons.

GaAs-based photocathodes are the primary choice for polarized electron sources, commonly used in polarized electron microscopes and polarized positron sources. GaAs photocathodes are typically activated with cesium and oxygen, which are highly reactive and require an ultra-high vacuum (∼10−11 Torr or lower) to operate reliably, resulting in substantial operational difficulties. A short exposure to a mediocre vacuum results in an instantaneous loss of cathode quantum efficiency (QE) due to the chemical reaction of the active layer with residual gas molecules or back-bombardment ions during operation. Covering the GaAs cathode with a 2D material, such as monolayer graphene, could provide protection against such damage due to the inhibition of chemical reactions with residual gas molecules. In this paper, we have incorporated a method known as intercalation to pass the active material underneath the graphene and activate the superlattice GaAs/GaAsP (SL-GaAs) photocathode. X-ray photoelectron spectroscopy, low-energy electron microscopy, and Mott scattering measurements were performed to evaluate the formation of the photocathode under graphene, as well as its spectral response and electron spin polarization. Our results demonstrate that the successful activation of the SL-GaAs photocathode with a graphene protection layer is achieved with a moderate QE. Furthermore, we found that the electron spin polarization of the cathode with a surface protection layer is higher than the conventional cathode without a protection layer.

Coherent electron cooling plays an important role in the Electron Ion Collider (EIC) by providing a fast cooling rate at collision energy to counter the emittance growth driven by intrabeam scattering effects. In this paper, we report on the high-fidelity simulation of the electron beam transport through the amplification section of the cooling channel. We will show the amplification of the initial modulation in the electron beam from the protons and present the study of collective effects such as the space-charge and CSR effects on the process of modulation amplification.

Superlattice GaAs photocathodes are vital for producing polarized electron beams for the Electron-Ion Collider (EIC) at Brookhaven National Laboratory. The electron pre-injector at the EIC requires a 7 nC bunch with at least 85% spin polarization from a GaAs-based superlattice cathode. The doping density of the very surface layer of the cathode needs to be optimized to extract a high bunch charge beam from the high-voltage DC gun. The polarization axis of the emitted beam is longitudinal, and it will be rotated to transverse direction using two Wien filters, each rotating the spin by 45 degrees. In this paper, we report our progress in recent R&D efforts for polarized photocathodes, and spin considerations for the EIC.

The polarized electron source is a critical component in accelerator facilities such as the electron–ion collider, which requires a polarized electron gun with higher voltage and higher bunch charge than existing sources. One challenge we faced was the surface charge limit of the distributed Bragg reflector GaAs/GaAsP superlattice (DBR-SL-GaAs) photocathode. We suppressed this effect by optimizing the surface doping and heat cleaning procedures. We achieved up to 11.6 nC bunch charge of polarized electron beam. In this report, we discuss the performance of tests of a DBR-SL-GaAs photocathode in the high voltage direct current gun. Possible reasons for the observed peak quantum efficiency wavelength shift are analyzed, and we addressed it by using a wavelength tunable laser. In addition, the impact of the DBR layer and laser on the lifetime is investigated in this paper. The optimal DBR-SL-GaAs operating zone has been proposed, which gave us a long lifetime and high polarization at 30 μA operation. The success of this polarized gun will be key to the future of the nuclear sciences.

In the electron ion collider design, in order to achieve the peak luminosity 10 34 / cm 2 / s with a reasonable lifetime, an efficient coherent electron cooling scheme was proposed to reduce the hadron beam emittance growth. Such a cooling scheme requires a good electron beam quality with a small energy spread. However, the shot noise in the electron beam through the accelerator might be amplified due to the microbunching instability and degrades the electron beam quality in the modulator section of the strong hadron cooling channel and correspondingly cooling rate. In this study, we report on self-consistent simulations of these effects using a real number of electrons to capture the details of shot noise and analysis of the shot noise growth through the accelerator.

Spin polarized photocathodes are key to the future operation of electron accelerators such as the ones at Thomas Jefferson National Accelerator Facility and Brookhaven National Laboratory. Currently, these photocathodes come in short supply due to limited production by molecular beam epitaxy. By developing a process to implement similar structures using metal organic chemical vapor deposition, the availability of these devices can be increased. In this paper, we detail the implementation of recent photocathode advancements via metal organic chemical vapor deposition process and show an improvement in both polarization and quantum efficiency of our devices compared to those fabricated via molecular beam epitaxy, with devices reaching 82% polarization and 2.9% quantum efficiency.