We report on a high output power (>0 dBm), integrated coherent transmit-receive optical sub-assembly (IC-TROSA) integrating all electro-optical and control functions for single-carrier, coherent transmission up to 800 Gb/s.

We report on the performance and reliability of hermetic photodetectors modules based on flip-chipped Modified Uni-Traveling Carrier (MUTC) PDs with active areas of 40 mu m, 28 mu m and 20 mu m diameter. The modules demonstrated a 3-dB bandwidth of up to 14, 26 and 30 GHz. High-saturated RF output power was achieved with output power levels of 25 dBm at 15 GHz, 21 dBm at 25 GHz and 17 dBm at 30 GHz. Ten modules were monitored at 120 mA of photocurrent at 50 degrees C and over 160 hours without any performance degradation or failure.

The ever-increasing demands in traffic fueled by bandwidth hungry applications are pushing data centers to their limits challenging the capacity and scalability of currently established transceiver and switching technologies in data center interconnection (DCI) networks. Coherent optics emerged as a promising solution for inter-DCIs offering unprecedented capacities closer to data centers and relaxing the power budget restrictions of the link. QAMeleon, an EU funded R and D project, is developing a new generation of faster and greener sliceable bandwidth-variable electro-optical transceivers and WSS switches able to handle up to 128 Gbaud optical signals carrying flexible M-QAM constellations and novel modulation techniques. A summary of the progress on the QAMeleon transponder and Reconfigurable Optical Add/Drop Multiplexer (ROADM) concepts is presented in this paper.

We report 400Gb/s single carrier transmission over 80km standard fiber using highly integrated optics in CFP2 form factor. 400Gb/s is achieved just below soft decision FEC limit while the improvement is reported with discrete receiver.

40 GHz quantum-dot mode-locked lasers providing low-jitter optical and electrical microwave signals are investigated. 160 Gb/s data transmission based on differential quadrature phase-shift keying and optical time-division multiplexing is demonstrated using a packaged module.

An overview of the advanced Indium Phosphide (InP) Electro-Optic Mach-Zehnder (MZ) Modulator technology which enables small form factor pluggable transceivers for coherent transmission is presented here. A highly efficient IQ-Modulator with a low insertion loss (IL), low V π , high extinction ratio and high electro-optic bandwidth is demonstrated. The modulator described here is very well suited for pluggable 100G/200G coherent transceivers with stringent electrical power consumption requirements. Additional functions already implemented on the mature InP photonic integration platform are expected to add further functionality to the InP IQ Modulator and finally result in a monolithic InP coherent transmitter.

Recently, microwave photonic techniques have emerged to address the challenges that microwave systems face under high-frequency or wideband conditions. To a large extent, the performance of microwave photonic systems depends on the performance of individual optoelectronics devices, such as high power photodiodes. Here, we report a fully-packaged photodetector module based on InGaAs/InP modified uni-traveling carrier (MUTC) photodiode. The modules demonstrated a 3-dB bandwidth up to 50GHz and a record-high output power of 14.0 dBm at 50GHz.

We report on a hermetically packaged 1310 nm mode-locked laser module operating at 40 GHz. The laser module generated 3.5 ps pulses and demonstrated ultra-low jitter in the hybrid locking regime.

We demonstrate a balanced 80GHz pin-photodetector chip with excellent responsivity, dark current and polarisation dependent loss. The device focuses on next generation optical networks with 56/64Gbaud and operates in C-band and L-band.

We demonstrate a high performance chip-on-carrier IQ modulator based on InP MQW technology. The device achieved a 3-dB bandwidth of 40 GHz, a Vπ of 2.2 V and an insertion loss of <;6.5 dB over the C-band.

Indium phosphide and associated epitaxially grown alloys is a material system of choice to make photonic integrated circuits for microwave to terahertz signal generation, processing and detection. Fabrication of laser emitters, high speed electro-optical modulators, passive waveguides and couplers, optical filters and high speed photodetectors is well mastered for discrete devices. But monolithic integration of them while maintaining good performances is a big challenge. We have demonstrated a fully integrated tunable heterodyne source designed for the generation and modulation of sub-Terahertz signals. This device is to be used for high data-rate wireless transmissions. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, electro-optic modulators and high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation at up to 120 GHz based on heterodyning the optical tones from two integrated lasers in an also integrated high bandwidth photodetector has been obtained.

We demonstrate hermetically packaged InGaAs/InP photodetector modules for high performance microwave photonic applications. The devices employ an advanced photodiode epitaxial layer known as the modified uni-traveling carrier photodiode (MUTC-PD) with superior performance in terms of output power and saturation. To further improve the thermal limitations, the MUTC-PDs were flip-chip bonded on high thermal conductivity substrates such as Aluminum Nitride (AlN) and Diamond. Modules using chips with active area diameters of 40, 28, and 20 μm were developed. The modules demonstrated a 3-dB bandwidth ranging from 17 GHz up to 30 GHz. In continuous wave mode of operation, very high RF output power was achieved with 25 dBm at 10 GHz, 22 dBm at 20 GHz, and 17 dBm at 30 GHz. In addition, the linearity of the modules was characterized by using the third order intercept point (OIP3) as a figure of merit. Very high values of OIP3 were obtained with 30 dBm at 10 GHz, 25 dBm at 20 GHz and more than 20 dBm at 30 GHz. Under short pulse illumination conditions and by selectively filtering the 10 GHz frequency component only, a saturated power of >21 dBm was also measured. A very low AM-to-PM conversion coefficient was measured, making the modules highly suitable for integration in photonic systems for ultralow phase noise RF signal generation.

We demonstrate a high-responsivity (0.52 A/W) and high-linearity 50 GHz photodiode module based on an MMI-Splitter and a 4×PD-Array with +3.5 dBm RF-power at 50 GHz and an OIP3 of >25 dBm at 40 GHz.

We demonstrate a fully integrated tunable continuous-wave (CW) millimeter wave heterodyne synthesizer. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation up to 110 GHz has been demonstrated.

We demonstrate a fully integrated tunable continuous-wave (CW) millimeter wave heterodyne synthesizer. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation up to 110 GHz has been demonstrated.

We have developed a packaged photodetector module with an RF output power of almost 25 dBm at 10 GHz and more than 23 dBm at 15 GHz. To the best of our knowledge, these are the highest RF power levels ever reported from fully packaged 1.55 μm photodetectors without electrical amplification.

We demonstrate a high-power and high-linearity photodiode module based on a 1×4 MMI-Splitter and a 4×PD-Array. The module achieved 10 dBm output power at 10 GHz and an OIP3 of >20 dBm at 20 GHz.

We report on packaged photodiode modules based on modified uni-traveling carrier photodiodes (MUTC-PDs). Modules with MUTC-PDs flip-chipped on Aluminum Nitride (AlN) and an active area diameter of 40 μm were developed. The module demonstrated a 3-dB bandwidth of up to 17 GHz. High saturated RF output power was achieved with 25 dBm output power at 10 GHz and 23.8 dBm at 15 GHz. Also, using a two tone experimental setup we measured the output 3rd order intercept point (OIP3) at 10 GHz to be over 30 dBm. Additionally, modules with MUTC-PDs flip-chipped on a Diamond substrate and an active area of 20 μm were developed. The modules exhibited a 3-dB bandwidth up to 30 GHz and an RF output power of 17 dBm at 30 GHz. To the best of our knowledge, these are the highest RF power and OIP3 levels ever reported in this frequency range from a packaged photodiode.

A fully integrated tunable heterodyne source designed for the generation and modulation of sub-Terahertz signals is demonstrated. This device is to be used for high data-rate wireless transmissions. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, electro-optic modulators and high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation at up to 120 GHz based on heterodyning the optical tones from two integrated lasers in an also integrated high bandwidth photodetector has been demonstrated.

We report on the design, packaging and experimental characterization of a waveguide photodetector monolithically integrated with a 1×4 MMI coupler and a vertically-tapered spotsize converter. The total device consists of an array of 4 photodiodes connected in parallel in order to increase the saturation current. A 3-dB bandwidth of up to 30 GHz was measured. High output power was achieved with approximately 10 dBm at 10 GHz and 7.5 dBm at 20 GHz. From 1-dB compression measurements at 10 GHz and 2 0 GHz, a saturation photocurrent as high as 40 mA was found. At 10 GHz and 20 GHz a third order intercept point (OIP3) of over 20 dBm was measured for photocurrent levels up to 35 mA.