In this study, the temperature-dependent dielectric properties of a Cu-doped diamond-like carbon (DLC) interfacial-layered Schottky device (SD), fabricated by the electrochemical deposition method, were systematically investigated in terms of the dominant polarization mechanisms. Impedance measurements, performed over the temperature range of 80-410 K, were used to calculate the dielectric constant (e'), dielectric loss (e ''), loss tangent (tan(S)), ac conductivity (cac), and complex electric modulus (M*), including its real (M ') and imaginary (M '') components. The results reveal that all dielectric parameters exhibit three distinct behaviours within three temperature regions, namely low-temperature (LTs: 80-170 K), moderate-temperature (MTs: 200-290 K), and high-temperature (HTs: 300-410 K) regimes. This behavior indicates a pronounced sensitivity of the DLC interfacial layer to temperature. It was also observed that different polarization mechanisms, including dipolar, trapping-related, electronic, and space-charge polarizations, become dominant depending on the temperature and applied voltage range. Owing to the heterogeneous structure of the SD, the contribution of Maxwell-Wagner polarization, as a specific form of space-charge polarization, becomes particularly significant in the HTs region. Moreover, Cu doping leads to an increase in carrier density within the DLC layer, enhancing the tunneling probability and strengthening space-charge polarization through the increased availability of free carriers.

Different thicknesses of Si3N4 insulator layers were grown on an (Au: Ti)/n-GaAs (MS) reference structure to analyze the effect of these layers with/without illumination on the electrical characteristics and compare the results between these structures. With this motivation, current measurements were made as a function of voltage over +/- 3 V, either in the dark or at 20-100 mW cm- 2 illumination with an increment of 20 mW cm- 2. Some important electric and optoelectronic parameters, such as barrier height at zero bias, ideality factor, saturation current at reverse bias, photosensitivity, photoresponsivity, and detectivity, have been determined using currentvoltage data in relation to illumination intensity. To compare the calculation methods used, the basic electrical parameters, the barrier height at zero bias, the ideality factor, and the series resistance were calculated first using the Thermionic Emission Method and then, alternatively, using Cheung functions. Additionally, the dependence of energy of the interface states was investigated using forward bias current voltage data with the ideality factor and barrier height with/without different intensities of illumination, because of their reordering/restructuring in electric field effects and illumination. The voltage-dependent characteristics of resistance of these structures were also determined from Ohm's Law for each illumination intensity.

To get more accurate/reliable results on the basic electronic-parameters and current transport/conduction mechanism (CCMs), the current–voltage (I–V) measurements were measured in a wide temperature and voltage regions in the Schottky diodes (SDs). Therefore, these measurements of Re/n-GaAs/Au SDs were performed over wide temperature (100–380 K) and voltage (− 1.0 V/1.4 V) ranges. Experimental-findings indicate that while the barrier height, BH at V = 0 (ΦB0) inclines with inclining temperature almost as exponentially, ideality factor (n) and series resistance (Rs) declines. These parameters were also obtained from the Cheung -functions a second way and observed an important discrepancy between them have been explained by the nature of calculated-model, voltage dependence of them, and barrier-inhomogeneities. CCMs were also investigated in detail, and it shows that field emission (FE) is more dominant than thermionic/emission (TE) and thermionic field/emission (TFE). For various constant current values, temperature coefficient of voltage was found higher than − 1 mV/K, so these samples may be used in thermal—sensor applications. To determine the change of BH with voltage, the BH—q/2kT graph was plotted in voltage range of 0.0–0.6 V and these two linear-components which are corresponding to low high temperatures and the value of BH decreases with rising temperature. In the calculation of BH the effect of voltage must be considered as well as temperature.

Reduced graphene oxide (RGO) and polyvinyl alcohol (PVA) were doped into cobalt ferrite (CF) to form an interfacial layer. This interlayer was then fabricated onto n-type silicon (Si) to create an Au/(RGO/PVA-doped CF)/(n-Si)/Al Schottky device. The temperature-dependent current-voltage (I-V) characteristics of the fabricated device were examined within 70-400 K, revealing clear transitions in barrier height (Phi B0), ideality factor (n), and current transport mechanisms. The Phi B0 increased from 0.259 eV to 0.893 eV with temperature, while n decreased, indicating barrier inhomogeneity. Gaussian distribution modeling and modified Richardson analysis confirmed Multi-Gaussian barrier profiles, suggesting thermally activated transport at high temperatures. The device exhibited outstanding temperature sensitivity, with values of 13.3-53.6 mA/K (for +/- 1.5 V constant voltage) and 19.7-36.9 mV/K (for 1 mu A constant current), significantly exceeding those of Si/SOI and graphenepolymer sensors. These findings demonstrate that the RGO/PVA-doped CF interlayer not only tailors barrier inhomogeneity but also enables ultra-sensitive, wide-range temperature sensing, making it a compelling candidate for next-generation electronic devices and low-cost sensor applications.

This study investigates the influence of copper (Cu) doping in diamond-like carbon (DLC) interlayers on the temperature-dependent electrical characteristics of MIS-type Schottky devices (SDs). Two structures were fabricated: a pure DLC interlayered device (SD1) and a Cu-doped DLC interlayered device (SD2). Capacitancevoltage (C-V) and conductance-voltage (G/omega-V) measurements were carried out over the 80-410 K temperature range to extract key electrical parameters, including series resistance (R S ), interface state density (N SS ), and Schottky barrier height (Phi B ). The Cu-doped device exhibits consistently lower and more stable real series resistance, with R S decreasing from 90 Omega at low temperatures to 55-60 Omega at elevated temperatures, while the pure DLC device shows significantly higher Rs values and stronger temperature dependence. Moreover, SD2 demonstrates a more regular temperature evolution of Phi B , whereas SD1 displays more complex behavior. Cu incorporation also reduces N SS from the order of 10 12 eV -1 cm - 2 to below 5 & times; 10 11 eV -1 cm - 2 and improves the symmetry and linearity of the C-V and 1/C 2 -V characteristics. A distinct thermally activated N SS feature near 300 K indicates Cu-related interfacial trap dynamics. Arrhenius analysis of the temperature-dependent interface state density further reveals shallow activation energies ( 0.036-0.07 eV) for the pure DLC device, while a higher activation energy ( 0.189 eV) observed for the Cu:DLC structure indicates deeper Cu-induced trap states that become thermally activated near the 230-290 K region. These findings highlight Cu-doped DLC interlayers as an effective route to enhance interfacial quality and thermal stability in MIS-type Schottky devices.

In this study, we combine n-type PEDOT:PSS with multilayer borophene nanosheets (BNSs) at defined weight ratios. As borophene is a material that behaves like a p -type, we observe the formation of localized p-n junctions along the organic–inorganic hybrid structures, as evidenced by current–voltage ( I-V ) curves measured in the dark and their photoconductivity behavior under specific x-ray dose rates via a medical fluoroscopy x-ray system. For instance, in the wt1% BNSs-doped structure, negative photocurrents stand out with increasing dose rates, while in the wt 10% doped structure, positive photocurrents are observed in reverse and forward biases, which are typical characteristics of photodetectors. The behavior of the open circuit voltage in reverse bias for the wt 20% doped structure as a result of high doping is also discussed. We obtain the x-ray detector parameters for the structure exhibiting more dominant photodetector behavior and present them alongside comparable, though limited, studies. These findings underscore the noteworthy interactions of organic–inorganic hybrid materials and highlight the potential of borophene as a 2D material for medical x-ray detection.

AgZnO-doped poly(vinyl alcohol) (PVA) interlayered Schottky photodiodes (PDs) were fabricated on n-type Si substrates, and their illumination-dependent charge transport and photoresponse characteristics were systematically investigated by current-voltage (I–V) measurements under dark conditions and illumination intensities ranging from 20 to 100 mW/cm2. The devices exhibited pronounced rectifying behavior in the dark, whereas the reverse-bias current increased markedly under illumination, confirming efficient PD operation. Thermionic emission (TE) analysis revealed that the ideality factor (n) increased from 3.07 to 11.55, while the Schottky barrier height (ΦB) decreased from 0.758 eV to 0.620 eV with increasing illumination intensity, indicating illumination-induced barrier inhomogeneity and enhanced interface-related transport effects. The extracted series resistance (RS) showed limited variation, whereas the shunt resistance (Rsh) and rectification ratio (RR) decreased under illumination, reflecting increased leakage current contribution and enhanced recombination processes at the interface. The specific detectivity (D∗) reached a maximum value of approximately 1.39x1010 Jones, indicating the high sensitivity of the fabricated PDs to weak optical signals. The enhanced optoelectronic performance is attributed to the synergistic role of the AgZnO-doped PVA interlayer, which modifies the effective barrier profile, promotes photogenerated carrier separation, and facilitates interface-assisted charge transport. These findings demonstrate that AgZnO-doped PVA interfacial engineering provides an effective route for tuning the illumination-dependent behavior of Schottky PDs and highlights the potential of these devices for photodetector and optoelectronic applications.

This study investigates the complex interplay between dielectric properties and the Au/(B + M-doped PVC)/n-Si (B as Brushite, CaHPO4·2H2O and M as Monetite, CaHPO4) organic interlayer within metal–polymer–semiconductor (MPS) structures. The work aims to comprehensively analyze the (B + M:PVC)′s impact on MPS dielectric, electric modulus, and conductivity properties, contributing to a deeper understanding of nanoscale materials in electronic devices. Impedance measurements of Au/n-Si Schottky structures with (B + M-doped PVC) composite interlayer were conducted across a wide range of frequencies (2 kHz-2 MHz) and voltages (− 3 V/ + 4 V). The exploration uncovers frequency–voltage dependence on crucial parameters like loss tangent (tanδ), complex permittivity (ɛ*), AC electrical conductivity (σac), and complex electrical modulus (M*). Meanwhile, capacitance–conductance (C–G/ω) measurements were utilized to derive the graphs for ɛ′, ɛ″, M′, M″, Z′, Z″, σac, and tanδ in relation to frequency and voltage variations. The interface states and polarization are effective at low and medium frequencies in both the reversal and depletion regions. In contrast, at high frequencies, the series resistance is effective only in the accumulation region. The obtained high dielectric interlayer (ɛ′ = 14.25) even at 2 kHz indicates that this organic interlayer can be successfully used in electronic devices instead of conventional insulators/oxides in terms of low cost/weight, easy performance, flexibility, high dynamic strength, and potential for energy storage applications.

To passivate interface states and enhance photocapacitive sensitivity, high-quality Poly(2-ethylhexyl acrylate) (PEHA) films were coated as an interlayer on n-Si via initiated Chemical Vapor Deposition (iCVD). Further, the iCVD technique provides a distinct advantage over conventional solution-based methods by enabling completely solvent-free and conformal film growth that preserves monomer functionality. In this study, the photodiode, photocapacitance and photoconductance characteristics of fabricated Au/PEHA/n-Si (MPS) and reference Au/n-Si (MS) diodes onto the same n-Si wafer and in the same conditions were comparatively investigated in the dark and under various illumination intensities (40-200 mW/cm2) to determine the illumination and PEHA interlayer effects on key electrical parameters and conduction mechanisms. I-V analyses performed in the dark and under illumination demonstrated that the MPS structure with PEHA interlayer increased the barrier height and prevented interface recombination, resulting in a stable Vocresponse in the device. To achieve sufficient accuracy and reliable results, impedance measurements were performed over a wide range of voltages and illuminations at 500 kHz. Experimental findings demonstrate that the PEHA interlayer effectively passivates the interface state density. Mott-Schottky analysis revealed that while the reference structure exhibited anomalies under illumination, the MPS structure showed stable barrier modulation consistent with the photovoltaic effect. Notably, the presence of the PEHA interlayer increased the photocapacitive sensitivity (Spc) by similar to 93% compared to the reference structure.

This study investigates the electrical and optoelectronic properties of undoped and Ti-doped amorphous WO3 thin films grown by the DC magnetron sputtering method and layered into ITO/WO3/Ag, ITO/W1-xTixO3/Ag, and ITO/W1-yTiyO3/Ag structures. Current-voltage (I-V) measurements were conducted in the dark and under 100 mW/cm2, with over a +/- 3 V range at room temperature. The basic electrical parameters, such as the reverse saturation current (I0), ideality factor (n), zero-bias barrier height (Phi B0), and series resistance (Rs), were calculated from several methods. Tauc analysis showed that optimal Ti doping (S2) narrowed the optical band gap from 3.10 eV to 3.07 eV by creating shallow traps within the oxide network. In the dark I-V, both S1 and S2 structures exhibited notable negative differential resistance in the reverse-bias region, which was attributed to a trap-assisted tunneling mechanism. At under 100 mW/cm2, the photon-induced trap-filling effect resulted in a massive decrease in the Rs. Optoelectronic parameters revealed that the S2 structure exhibited notable performance, achieving a photo-sensitivity (S) of 7160. With this, the responsivity (R) and specific detectivity (D*) of the structure were found to be 2.00 A/W and 5.88 & times; 1011 Jones, respectively. In contrast, high Ti doping decimated the photonic performance of the device by structurally forming deep recombination centers in the S3 (S congruent to 6.5). Furthermore, transient photoresponse measurements revealed a bias-dependent multi-state behavior, transitioning from positive photocurrent (PPC) at zero bias to an anomalous negative photocurrent (NPC) dip at moderate reverse biases, and ultimately evolving into a resistive switching state at high electric fields.

In this current article, Au/n-Si (metal/semiconductor) MS devices with high-purity poly-(vinyl alcohol) (PVA) (99+% hydrolyzed) (MPS1) and Au/(CdTe:PVA)/n-Si (metal/polymer/semiconductor) (MPS2) are grown on the same n-type Si wafer by using the spin-coating technique and determine their effects on light sensitivity and basic electronic parameters like saturation current (I 0), which is derived from the straight-line intercept of ln-(I) at V = 0, zero-bias barrier height (ϕ b 0) at V = 0, ideality/quality factor (n), and both the shunt/series resistances (R s , R sh). For this purpose, the current-voltage (I-V) measurement is carried out over a wide voltage range (±4.5 V), both in the dark and under 100 mW/cm2 conditions. Experimental results showed that the calculated electrical parameters were highly dependent on light, the organic interlayere, and voltage. The profile of interface states (N ss ) dependent on energy and voltage-dependent resistance (R i ), which significantly limit the performance of the photodiode, wwas obtained from the Card-Rhoderick model and Ohm's law for both before and after illumination, respectively. In addition, voltage-dependent curves of the photosensitivity, photoresponsivity (R), and specific detectivity (D*) were obtained for the 100 mW·cm-2 intensity. When the results obtained for MPS1 and MPS2 photodiodes were compared with each other and with the existing literature, it was observed that the MPS2 exhibited significantly better performance. Therefore, it was shown that MPS2 with the (CdTe:PVA) interlayer could be a good candidate for electrical, optical, and energy conversion applications.

In this research, the n-Si wafer is used to generate Au/n-Si (C0), Au/PVC/n-Si (C1), and Au/PVC: Molybdenum (Mo)/n-Si (C2) structures to examine the effects of PVC and PVC:Mo interlayers on the electrophysical characteristics of Schottky barrier diodes (SBDs). The mean crystallite size of the Mo nanostructure is computed by X-ray diffraction (XRD) spectroscopy. The I-V data is used to derive the electrical properties of these structures. These diodes’ current conduction mechanisms (CCMs) and energy-dependent distributions of surface states (Nss) are obtained. By reducing the ideality factor (n), series resistance (Rs), Nss, and leakage current (I0), as well as raising Rsh together with barrier height (BH), the usage of PVC and Mo-doped PVC interfacial polymer layers improves the performance of SBDs. Capacitance/conductance-frequency (C/G-f) measurements are used to study the dielectric constant (ε′)/loss (ε′′) and ac electrical conductivity (σac) in a wide frequency range. The negative capacitance/dielectric origin at low frequencies is thoroughly discussed.

In this work, the optoelectronic response of Al/p‐Si photodiodes (PDs) with and without (PVP:Gr‐ZnTiO3) composite interlayer is investigated in dark and under various light intensities (P). The manufacturing/surface preparation is thoroughly explained. The electric/optic parameters including leakage/saturation current (I0), series/shunt resistances (Rs/Rsh), barrier height (BH), ideality factor (n), energy‐dependent density distribution of surface/interface levels (Nss), photoinduced current (Iph), photosensitivity (S), optical responsivity (R), and specific detectivity (D*) are calculated from the I–V data in dark and under illumination intensities. Raising the light intensity results in a drop in ΦB0 and Rs quantities while increasing the I0 and n values due to photogenerated electron–hole pairs under illumination. The ΦB0‐P and ΦB0‐n graphs are used to calculate the illumination factor and the ΦB0 in the ideal form. An acceptable linear behavior appears in the Iph–P profiles for the negative‐bias region, where the illumination dependence of photocurrent is explored. It is found that the (PVP:Gr‐ZnTiO3) interlayer leads to an increase in the S, R, and D* values of the PD to ≈1200, 400 mA W−1, and 1.14 × 1014 Jones, respectively. These results show that the used (PVP:ZnTiO3) interlayer displays an excellent photoresponse and may effectively replace conventional PDs for applications in optoelectronic and photovoltaic devices.

In this study, Au/Poly[3-(2,5-dimethyl-4-thienyl)phenylthiophene](P3DMTFT)/n-GaAs Schottky diodes were produced, and their CTMs were evaluated between 80 and 320 K using current/voltage (I-V)characteristics. Using the standard thermionic emission (TE) theory/model, basic electrical parameters were extracted from the forward bias voltages at each temperature. Fluctuations in the barrier height ( BH, Phi B0 ), and ideality factor (n) were attributed to BH inhomogeneity, which was assumed to follow a Gaussian distribution (GD) across the metal-semiconductor contact. The Richardson-Arrhenius curve deviated from linearity at lower temperatures. The A B0 and n against q/2 kT graphs exhibited two distinct linear regions with differing slopes. These are two key indicators that there is a double Gaussian distribution between metal and semiconductor. To improve the analysis, a modified Richardson plot was created utilizing the standard deviation (sigma s0) values from the slopes of the two linear sections of Phi B0-q/2 kT. The energy-dependent profiles of the surface states (Nss) were also derived using the forward-bias I-V data.

Dielectric characterization of metal-interlayer-semiconductor (MIS) structures of N-doped Diamond-Like Carbon (N:DLC) film-coated interlayer is performed to assess their dielectric properties, AC electrical conductivity (sigma(ac)), and polarization mechanisms. The interlayer's structural analysis is performed using Scanning Electron Microscopy (SEM) and X-ray Photo-electron Spectroscopy (XPS). The in-phase and out-of-phase parts of the complex dielectric constant (epsilon & lowast;), the complex electric modulus (M & lowast;), the values of tangent loss (tan delta), and sigma(ac) are determined utilizing admittance-voltage (Y = 1/Z = G + j omega C) measurements revealing that their strong sensitivity to voltage and frequency. Remarkably, a relative permittivity (epsilon ') of 407 at 1 kHz, 104 times higher than traditional SiO2 insulators, is observed, suggesting a significantly enhanced electron density and energy storage capacity for ultracapacitors. The double logarithmic sigma(ac) vs f plot slope changes between 0.36 and 0.20 at strong accumulation. The intersection point in sigma(ac) implies a lack of free electrons at higher frequencies, suggesting an electron trapping or recombination process.

To explore the effect of a TiO2-surfactant (Brij 58) insulator as an interfacial layer on the electrical properties of a metal–semiconductor (MS) structure, a Au/TiO2-surfactant/n-Si (MIS) structure was created on an n-Si wafer. The spin coating method was used to deposit a TiO2 layer on the Si wafer. The electrical performance of the MIS structure is of great importance, and its study at forward and reverse biases requires the use of the I–V data (from −4.5 V to +4.5 V). The values of the reverse saturation current (I0), series resistance (Rs), shunt resistance (Rsh), and rectification ratio (RR) are this structure’s essential electrical characteristics that are calculated and compared with those of the MS structure. By measuring the energy dependence at forward bias, the density distribution of the surface states can be ascertained. The current conduction mechanisms are also determined. Moreover, the dielectric features of the MIS structure are extensively studied by calculating the values of ε′, ε″, tanδ, Rs, and σ over a range of bias voltages (0.25–4 V) and frequencies (1 kHz–1 MHz) using C/(G/ω)–V and C/(G/ω)–f measurements. The C−2–V plot of the structure is examined at a frequency range of 1 kHz–1 MHz. The results of these measurements are discussed in detail, providing insight into the changes in the impedance properties of the MIS device.

In this article, Au/n-Si metal/(organic/polymer)/semiconductor (MPS) devices with (MWCNT-doped PVA-B(OH)3) interlayer grown by spin-coating were prepared, electrical/optical characteristics of them have been extracted from the I–V characteristics as function of illumination (dark-100 mW/cm2) and time (0–200 s). The values of quality factor (n), reverse saturation-current (I0), potential-barrier height (BH/ФB0), series/shun resistances (Rs, Rsh), and rectification/ratio (RR) have been obtained from the I–V characteristics by utilizing thermionic emission (TE) mechanism, Cheung functions, and Norde method for all illumination intensities (P). The energy dependence profiles of interface states (Nss) in dark and under 100 mW/cm2 illumination intensity was also calculated by using the I–V data at positive bias region by considering voltage dependence of BH and n, and they change at about between 1.7 × 1014 eV−1 cm−2 at 0.70 eV and 4 × 1014 eV−1 cm−2 at 0.45 eV. According to the I–t–P measurements, the photocurrent (Iph) increases with increasing P, and sample was found strong function of illumination and exhibited photo-sensing properties. The slopes of the log(Iph)−log(P) plots were found to be between 0.25 and 0.70, indicating a linear photoconductive behavior. Furthermore, the photosensitivity (S), photo-responsivity (R), and specific-detectivity (D*) of the sample for various light intensities were investigated. All experimental results show that the fabricated diodes are considerably dependent on voltage and illumination intensity.

In this present study, Al/p-Si/Au (MS) structure with Sulphur-doped diamond-like carbon (S:DLC) were fabricated. In order to obtain more information on the electrical parameters and formation natural barrier height (BH) of them, the impedance-voltage-temperature (C/G-V-T) measurements were performed both in wide temperature range of 200-440 K and voltage range of-5 V/+8 V for three different-frequencies (0.1, 0.5, 1 MHz). The C/G-V curves show an anomalous peak especially at moderate and high temperatures. While the peak value inclines with inclining temperature, its position shift towards to negative-voltages due to the rearrangement of the interface-states (Nss) under influence of temperature and electric-field. Some important electrical-parameters like density of NA, Fermi-level (EF), & Vcy;& Ncy;, and thickness of depletion-region (WD) were obtained from the intercept and slope of the C- 2 vs V curve as function of temperature. The voltage dependent distribution of Nss was extracted from the Hill-Coleman and low-high temperature models. The ln(sigma) vs q/kT plot shows to two different linear regions, indicating two-different transmission mechanisms both at lower and higher temperatures. The temperature sensitivity coefficient was also extracted from V vs T plots at 0.7 nF as 29 mV/K at 0.5 MHz and this value shows us that the prepared structures can also be used as temperature sensors.

In this study, Schottky barrier diodes (SBDs) incorporating a polymer interface layer composed of 0.03 graphene (Gr): polyvinyl alcohol (PVA) were fabricated. Then, the electrical characteristics of these structures were analyzed using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at 1 MHz under varying beta radiation doses. The impact of radiation on their electrical characteristics was evaluated at room temperature as a function of dose. The experimental results revealed a progressive decrease in both capacitance and conductance of the Au/(0.03 Gr: PVA)/n-Si (MPS) structure with the increase in beta radiation dose. The C-V curves exhibited a distinct peak in the voltage range between -0.8 V and 1.8 V under radiation exposure, which was attributed to the unique distribution of interfacial states (N-ss) within the polymer layer and the energy gap. Furthermore, the C-G/omega-V characteristics indicated the structure's inductive behavior, which disappeared after exposure to a 10 kGy radiation dose. Analysis of the reverse-bias C-2-V plots before and after beta radiation demonstrated linearity over a broad voltage range, enabling the calculation of key parameters such as diffusion potential (V-D), donor concentration (N-D), depletion width (W-D), Fermi level (E-F), and barrier height (& Fcy;(B)). The MPS structure's interfacial state density (N-ss) before radiation (0 kGy) was determined using the high-low frequency capacitance difference method (C-HF-C-LF), and it was found to be on the order of similar to 10(13) eV(-1)cm(-3), after exposure to a beta radiation dose of 22 kGy, the interfacial state density significantly decreased to similar to 10(10) eV(-1)cm(-3), which was determined through capacitance difference analysis (C-Before -C-After). This notable reduction in N-ss was attributed to the passivation effect of the polymer interface layer (0.03 Gr: PVA). The series resistance (R-s) of the MPS structure, which was influenced by beta radiation, was evaluated using the admittance method. R-s had a more pronounced effect in the accumulation region, whereas N-ss was more significant in the depletion region. Despite the influence of beta radiation on the electrical properties, there were no substantial defects or structural distortions that could impair the performance of the Au/(0.03 Gr: PVA)/n-Si (MPS) structure. These findings suggest that Schottky barrier diodes with polymer interface layers are promising candidates for use in MPS-type detectors, and they offer a viable alternative to traditional MIS/MOS-type detectors.

In this study, some electrical parameters of the pure and copper-doped diamond-like carbon (DLC) interfacial-layered Schottky devices have been investigated under different temperature conditions. Thus, it was aimed to determine the effects of copper doping on the electrical properties of the devices. Experimental results showed that although different behaviors were observed in both devices in some specific temperature regions, the series resistance values ​​in the copper-doped device gave more stable results depending on the temperature and voltage changes. On the other hand, while the surface states in the DLC interlayered device varied between 1013 and 1014 eV−1 cm−2 levels, lower values (1012–1013 eV−1 cm−2 levels) were observed in the copper-doped device. Moreover, voltage-dependent ideality factor and barrier height exhibited classical behavior as in the literature. However, the copper-doped device still exhibited more stable behaviors. As a result, it has been understood that the electrical properties of the copper-doped device give more regular/stable and higher-quality results.