Zinc sulphide thin films have been deposited with CART using zinc chlorideand zinc acetylacetonate as Zn compounds and thiourea and 1,1,3,3-tetramethylthiourea as S compounds soluted in methanol, ethanol, isopropanol and cellosolve. After optimalization of the deposition process homogeneous layers with a c-axis oriented hexagonal columnar structure with a high density (up to 96%) were obtained. Luminescence was observed with films grown above 500°C. The influence of the hot plate temperature, flow of carrier gas, nozzle geometry, distance nozzle substrate, and volatility of the solvent and reactants on the growth rate, homogenity and density of the film has been shown. Some rules for the selection of the starting compound are given. TG analyses of the reactant compounds was used to compare their volatility and stability.