Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].

The aim of this study is to explain how a quantum network can be used as simple model to calculate complex band structures. The paper contains an introduction, a mathematical exposure of the method, and applications to graphene, boron nitride, and polyacetylene chains. Using a quantum network is a simple, intuitive, and, yet, rather accurate way to obtain a band structure for a complex material. One focus here is to invoke physical and chemical intuition to construct the effective one-body potential along the wires of a quantum network.