Polar angle of incidence, substrate temperature, and atom flux are of key importance to the self-organisation process on a substrate surface during oblique incidence deposition. The substantial influence of these parameters in homoepitaxial growth on Cu(001) is studied using scanning tunneling microscopy, high-resolution low-energy electron diffraction, and extensive growth simulation. The quantitative simulations reproduce the experimentally observed phenomena in great detail provided the steering effect is incorporated and accurate barriers for interlayer transport are used. Both experimental techniques reveal the formation of rectangular mounds for sufficiently large angles of incidence that are initially elongated in the direction perpendicular to the deposition plane of incidence. The simulations show a transition from perpendicular to parallel orientation, which occurs through pyramid formation at a coverage that depends on the angle of incidence and the substrate temperature. The elongation of the islands can be quite strong, leading to ripple formation and a very strong roughening of the growth front. The enhanced roughening of the growth front, compared to the already rough growth observed at normal incidence, is identified as super Poisson growth.

High resolution diffraction measurements reveal the emergence of anisotropic adatom islands during submonolayer homoepitaxial growth of Cu(001) at grazing incidence. This anisotropy is mimicked well in simulations only after the incorporation of attractive dipolar interactions between the surface and the atoms in the gas phase. The anisotropy of the islands depends markedly on the range of the attractive potential, which allows quantitative insight into the shape of the potential. The role of long- and short-ranged interactions is delineated.

The initial stages of homoepitaxial growth of Cu(001) have been studied by combining experiments and simulations. The investigated temperature window ranges from 200 to 300 K, the deposition rates vary from about 0.5 to 5 monolayer (ML)/min, and the coverage ranges up to about 10 ML. The simulated data have been extracted from a kinematic Monte Carlo approach using a bulk-continued fcc lattice and energetic activation barriers taken from recent literature. The experimental data are thermal energy helium-uptake curves measured in situ during growth. The Ehrlich-Schwoebel barriers for descent from < 110 >-oriented and < 100 >-oriented steps have been used as fitting parameters for the heights of the first and second maxima of the temporal oscillations in the He-uptake curves. Remarkable agreement has been achieved in the entire parameter space except for temperatures below about 230 K. The deviations in the latter range are attributed to failure of the bulk-continued fcc lattice due to, e.g., contraction, etc., becoming of importance for small adatom islands. This result allows an unequivocal determination of the Ehrlich-Schwoebel barrier associated with interlayer mass transport via a kink site (i.e., a < 100 > segment) in otherwise straight < 110 > steps, amounting to E(ES)(< 100 >)=-5 +/- 3 meV. The Ehrlich-Schwoebel barrier associated with < 110 > is determined at E(ES)(< 110 >)=120 meV or higher. The perfect agreement between simulated and the experimental data in the wide range of parameter space also permits a quantitative evaluation of both coarsening, i.e., the increase in the lateral length scale of the structures and the kinetic roughening during growth. The lateral length scale varies with time to the power n=0.22 +/- 0.01 in perfect agreement with experimental literature data. Roughening exponents beta=0.5 and 0.25 have been obtained for 250 and 290 K, respectively, also in very good agreement with previous experimental findings.