Third order grating filters fabricated in small Silicon-on-Insulator rib waveguides are demonstrated. Variations in grating etch depth and duty cycle are considered, and a maximum experimental reflection of 42% is demonstrated for gratings of 1500 µ m in length, with a grating period of approximately 689 nm and an etch depth of 200 nm. Agreement with modeling is shown to be good.

Scanning Photo-Induced Impedance Microscopy (SPIM) is an impedance imaging technique that is based on photocurrent measurements at field-effect structures. The material under investigation is deposited onto a semiconductor-insulator substrate. A thin metal film or an electrolyte solution with an immersed electrode serves as the gate contact. A modulated light beam focused into the space charge region of the semiconductor produces a photocurrent, which is directly related to the local impedance of the material. The absolute impedance of a polymer film can be measured by calibrating photocurrents using a known impedance in series with the sample.Depending on the wavelength of light used, charge carriers are not only generated in the focus but also throughout the bulk of the semiconductor. This can have adverse effects on the lateral resolution. Two-photon experiments were carried out to confine charge carrier generation to the spacecharge layer. The lateral resolution of SPIM is also limited by the lateral diffusion of charge carriers in the semiconductor. This problem can be solved by using thin silicon layers as semiconductor substrates. A resolution of better than 1 mu m was achieved using silicon on sapphire (SOS) substrates with a I l.Lm thick silicon layer. (c) 2005 Elsevier Ltd. All rights reserved.

This paper reports on the measurements of displacement and blocking force of piezoelectric micro-cantilevers. The free displacement was studied using a surface profiler and a laser vibrometer. The experimental data were compared with an analytical model which showed that the PZT thin film has a Young's modulus of 110GPa and a piezoelectric coefficient d31,f of 30pC/N. The blocking force was investigated by means of a micro-machined silicon force sensor based on the silicon piezoresistive effect. The generated force was detected by measuring a change in voltage within a piezoresistors bridge. The sensor was calibrated using a commercial nano-indenter as a force and displacement standard. Application of the method showed that a 700μm long micro-cantilever showed a maximum displacement of 800nm and a blocking force of 0.1mN at an actuation voltage of 5V, within experimental error of the theoretical predictions based on the known piezoelectric and elastic properties of the PZT film.