We discuss the design, fabrication, and evaluation of high speed integrated optical devices for application to photonics insirumentation systems. Specifically, we have demonstrated integrated optical devices with bandwidths in excess of 25GHz and implemented these devices in single-shot, streak camera based recording schemes.

This paper reports our preliminary results on an electrooptical light deflector for streak camera applications that uses tungsten bronze SBN:60% crystals. We found the performance of these ferroelectric crystals to be an order of magnitude better than the best LiNbO3 crystals currently available. We discuss the theory and performance of this crystal as well as other bronze crystals for application to the streak camera.

The design, fabrication, and testing of a high speed traveling wave directional coupler modulator for a guide wavelength of 810 nm is described. Application to high speed diagnostic systems is discussed.

Integrated optics have the potential to replace conventional electronics in many instrumentation applications; in many cases the integrated-optics approach is the only one that will achieve the necessary bandwidth and information-density goals. Thus far, has been done to address the prompt hardness of these devices to intense ionizing-radiation fields. We present preliminary data on the response of optical directional coupler modulators (ODCMs) to radiation from a Febetron. The Febetron produces energetic electrons in the 300-700 keV range in tilde 3-ns FWHM pulses, with a maximum dose rate of tilde 1014 rad/s. The operation of the ODCM is monitored during and promptly after the Febetron pulse impinges the device. Long-term effets are also monitored. These data are analyzed with respect to the operation of such devipes in a harsh inonizing-radiation environment.

We discuss the design, fabrication, and evaluation of integrated optical devices for application to high speed diagnostic systems. In particular, we focus on directional coupler modulators designed for analog modulation of large signals at 810 nm.

This paper describes a simple method to predict the transient response of variable impedance stripline to pulse excitation. The technique uses a finite-difference-based quasi-static impedance formulation to calculate the reflection coefficient at each point along the direction of pulse propagation. Excellent correlation between predictions and results obtained via time-domain reflectometry was noted.

Under high bias voltage, the leakage current through a silicon photoconductive switch is mainly caused by carrier injection at the metallic contacts. A low leakage, high voltage silicon photoconductive switch is fabricated by the introduction of carrier trap centers between the silicon substrate and metallic contacts. We report 2.5-mm gap photoconductive switches with leakage currents of less than 50 mA at a pulse bias of 10 kV for 600 ns, and an ‘‘on’’ resistance of less than 1.3 Ω, when illustrated by a 1-ns, 1000-μJ pulse of 1.05-μm radiation.