Polymethacrylate and polycondensated polymers based on chromophores containing the s-triazolo[3,4-b]-thiadiazole heterocycle were synthesized. Chromophore and polymer preparations are described. Second order NLO measurements are reported for polymers and for one functionalized chromophore. The maximum value of second harmonic generation coefficient (d33) measured is 11.5pm/V at incident laser wavelength of 1368nm. For the most active polymer, 85% of the initial d33 value is retained after 27 days at 80°C.

In this work, we studied the effects of different thermal annealing on the electrical characteristics of non-self-aligned low-temperature p-channel polycrystalline silicon (polysilicon) thin film transistors. Different thermal treatments were performed after Al-gate formation at different temperature (200°C, 250°C, 350°C and 450°C) and annealing times. We found that optimal conditions were obtained at 350°C, with transfer characteristics showing a subthreshold slope of 0.5V/dec, field effect mobility >100cm2/Vs and threshold voltage around −3.5V. Hot carrier induced degradation was also analyzed performing bias-stress measurements on devices annealed at 350°C and at different bias stress conditions. The experimental data show that a maximum transconductance degradation is obtained for Vg(stress)−Vt=−4V while bias-stress at Vg=Vt and ∣Vg(stress)∣≫∣Vds(stress)∣ did not produce appreciable changes in both transfer and output characteristics.