We perform a MonteCarlo simulation in order to study the connection between the morphology and the transport properties of grain boundaries (GBs) in graphene. We explore the configurational space of GBs to generate ensembles of realistic models of disordered interfaces between graphene misoriented domains. Among other observables, transmission across GBs has been probed all along the simulation, thus making us able to establish a connection between averaged transmission and the topological invariant of GBs, the misorientation angle. We extend to disordered GBs the remarkable result that the low angle regime is characterized by a decrease of the individual GB conductance upon a reduction of the angle, as first found for periodic GBs. However, we explored a comprehensive range of misorientation angles such that our results should serve as a starting data set to study the effect of polycrystallicity on transport in large samples.

Materials Cloud is a platform designed to enable open and seamless sharing of resources for computational science, driven by applications in materials modelling. It hosts (1) archival and dissemination services for raw and curated data, together with their provenance graph, (2) modelling services and virtual machines, (3) tools for data analytics, and pre-/post-processing, and (4) educational materials. Data is citable and archived persistently, providing a comprehensive embodiment of entire simulation pipelines (calculations performed, codes used, data generated) in the form of graphs that allow retracing and reproducing any computed result. When an AiiDA database is shared on Materials Cloud, peers can browse the interconnected record of simulations, download individual files or the full database, and start their research from the results of the original authors. The infrastructure is agnostic to the specific simulation codes used and can support diverse applications in computational science that transcend its initial materials domain.

The ever-growing availability of computing power and the sustained development of advanced computational methods have contributed much to recent scientific progress. These developments present new challenges driven by the sheer amount of calculations and data to manage. Next-generation exascale supercomputers will harden these challenges, such that automated and scalable solutions become crucial. In recent years, we have been developing AiiDA (aiida.net), a robust open-source high-throughput infrastructure addressing the challenges arising from the needs of automated workflow management and data provenance recording. Here, we introduce developments and capabilities required to reach sustained performance, with AiiDA supporting throughputs of tens of thousands processes/hour, while automatically preserving and storing the full data provenance in a relational database making it queryable and traversable, thus enabling high-performance data analytics. AiiDA's workflow language provides advanced automation, error handling features and a flexible plugin model to allow interfacing with external simulation software. The associated plugin registry enables seamless sharing of extensions, empowering a vibrant user community dedicated to making simulations more robust, user-friendly and reproducible.

Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical simulations that this is a consequence of a structural transformation of the moire pattern inherent to twisted bilayer graphene taking place at twist angles theta below a crossover angle theta(star) = 1.2 degrees. The transformation is governed by the interplay between the interlayer van der Waals interaction and the in-plane strain field, and is revealed by a change in the functional form of the twist energy density. This transformation unveils an electronic regime characteristic of vanishing twist angles in which the charge density converges, though not uniformly, to that of ideal bilayer graphene with Bernal stacking. On the other hand, the stacking domain boundaries form a distinct charge density pattern that provides the STM signature of the hexagonal solitonic network.

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in electrical and optical properties. Here we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating. We find that the conductivity of monolayer ReS2 is completely suppressed at high carrier densities, an unusual feature unique to monolayers, making ReS2 the first example of such a material. Using dual-gated devices, we can distinguish the gate-induced doping from the electrostatic disorder induced by the polymer electrolyte itself. Theoretical calculations and a transport model indicate that the observed conductivity suppression can be explained by a combination of a narrow conduction band and Anderson localization due to electrolyte-induced disorder.

This thesis is devoted to the computational study of the electronic and transport properties of monolayer and bilayer graphene in the presence of disorder arising from both topological and point defects. Among the former, we study grain boundaries in monolayer graphene and stacking domain boundaries in bilayer graphene, whereas among the latter we study hydrogen atoms covalently bound on the graphene crystal lattice. The electronic spectrum of disordered graphene has been studied within a tight-binding framework, which has been coupled to the Landauer-Buttiker theory and Green?s function techniques in order to have access to the properties of coherent transport of graphene charge carriers. We assess the low-energy equilibrium structures of defective graphene by a combination of ab initio density functional theory, classical potentials, and Monte Carlo methods. We study periodic grain boundaries in monolayer graphene and individuate two classes of defects with opposite effects in terms of scattering of low-energy charge carriers. One class, unexpectedly, is highly reflecting in the limit of low defect density, whereas another is highly transparent. Subsequently, we study disordered grain boundaries in order to predict the intrinsic conductance of realistic polycrystalline graphene samples. In two related works, conducted in collaboration with experimentalists, we identify the atomic structure of periodic grain boundaries imaged by scanning tunneling microscopy, and discuss the valley-filtering capabilities of a line defect of graphene that can be grown in a controllable manner. Next, we investigate the electronic transport of graphene with realistic hydrogen adsorbates, whose equilibrium configurations are obtained by means of Monte Carlo simulations. We find that the conductance of graphene dramatically increases upon formation of cluster adatoms, which we predict to happen spontaneously at room temperature. This is due to the non- resonant nature of a large fraction of hydrogen clusters in the room-temperature distribution, which we further elucidate by means of an analytically solvable model. Finally, we study the behavior, in terms of structural and electronic properties, of twisted bilayer graphene in the limit of zero twist angle. We find a critical angle below which the system arranges in a triangular superlattice of Bernal-stacking domains, separated by a hexagonal network of stacking domain boundaries. The presence of stacking domain boundaries is at the base of our interpretation of an experiment reporting oscillations in the electrical conductance of bilayer graphene subjected to mechanical indentation.

Nanoelectromechanical systems constitute a class of devices lying at the interface between fundamental research and technological applications. Realizing nanoelectromechanical devices based on novel materials such as graphene allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this work, we realize electromechanical devices using single and bilayer graphene and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of individual graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in applications based on nanoelectromechanical systems.

Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger size adatom aggregates. Such spatial correlation is found to strongly influence the electronic transport properties of disordered graphene. Our scaling analysis shows that such aggregation of adatoms increases conductance by up to several orders of magnitude and results in significant extension of the Anderson localization length in the strong localization regime. We introduce a simple definition of the effective adatom concentration x*, which describes the transport properties of both random and correlated distributions of hydrogen adatoms on graphene across a broad range of concentrations.

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular ``5-5-8'' line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated ``valley valve'' device, a critical component for valleytronics.

Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene, aiming to show that the inclusion of different electron-phonon couplings is of paramount importance to interpret accurately the properties of prototype organic semiconductors. While in the case of rubrene, the coupling between charge carriers and low frequency inter-molecular modes is sufficient for a satisfactory description of spectral and transport properties, the inclusion of electron coupling to both low-frequency inter-molecular and high-frequency intra-molecular vibrational modes is needed to account for the temperature dependence of transport properties in smaller oligoacenes. For rubrene, a very accurate analysis in the relevant experimental configuration has allowed for the clarification of the origin of the temperature-dependent mobility observed in these organic semiconductors. With increasing temperature, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions has been calculated, including vertex corrections that give rise to a transport lifetime one order of magnitude smaller than the spectral lifetime of the states involved in the transport mechanism. The mobility always exhibits a power-law behavior as a function of temperature, in agreement with experiments in rubrene. In systems gated with polarizable dielectrics, the electron coupling to interface vibrational modes of the gate has to be included in addition to the intrinsic electron-phonon interaction. While the intrinsic bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the coupling with interface modes is dominant for the activated high temperature contribution of localized polarons. Finally, the effects of a weak disorder largely increase the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant temperature window.

Grain boundaries in epitaxial graphene on the SiC(0001̅) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations determines the critical misorientation angle of buckling transition θc = 19 ± 2°. Periodic structures are found among the flat large-angle grain boundaries. In particular, the observed θ = 33 ± 2° highly ordered grain boundary is assigned to the previously proposed lowest formation energy structural motif composed of a continuous chain of edge-sharing alternating pentagons and heptagons. This periodic grain boundary defect is predicted to exhibit strong valley filtering of charge carriers thus promising the practical realization of all-electric valleytronic devices.

Submitted for the MAR14 Meeting of The American Physical Society Topological Aspects of Charge-Carrier Transmission across Grain Boundaries in Graphene1 OLEG V. YAZYEV, FERNANDO GARGIULO, Ecole Polytechnique Federale de Lausanne (EPFL), Switzerland — Dislocations and grain boundaries are intrinsic topological defects of large-scale polycrystalline samples of graphene. These structural irregularities have been shown to strongly affect electronic transport in this material. Here, we report a systematic investigation of the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-Büttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burgers vector b = (1, 0). The observed transport anomaly is explained from the point of view of resonant back-scattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations characterized by b = (n,m) with n −m ̸= 3q (q ∈ Z). Our work identifies an important source of charge-carrier scattering caused by the topological defects present in large-area graphene samples produced by chemical vapor deposition. Reference: F. Gargiulo and O. V. Yazyev, arXiv:1307.6746. 1This work was supported by the Swiss NSF (grant No. PP00P2 133552). Computer resources provided by the CSCS (project s443). Oleg V. Yazyev Ecole Polytechnique Federale de Lausanne (EPFL), Switzerland Date submitted: 14 Nov 2013 Electronic form version 1.4

Dislocations and grain boundaries are intrinsic topological defects of large-scale polycrystalline samples of graphene. These structural irregularities have been shown to strongly affect electronic transport in this material. Here, we report a systematic investigation of the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-Büttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burgers vector b = (1,0). The observed transport anomaly is explained from the point of view of resonant backscattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations characterized by b = (n,m) with n - m ≠ 3q (q ∈ Z). Our work identifies an important source of charge-carrier scattering caused by the topological defects present in large-area graphene samples produced by chemical vapor deposition.

Spectral and transport properties of the quasi two-dimensional adiabatic Su-Schrieffer-Heeger model are studied adjusting the parameters in order to model rubrene single-crystal field effect transistors with small but finite density of injected charge carriers. We show that, with increasing temperature $T$, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions is calculated including vertex corrections which give rise to a transport lifetime one order of magnitude smaller than spectral lifetime of the states involved in the transport mechanism. With increasing temperature, the transport properties reach the Ioffe-Regel limit which is ascribed to less and less appreciable contribution of itinerant states to the conduction process. The model provides features of the mobility in close agreement with experiments: right order of magnitude, scaling as a power law $T^{-\gamma}$, with $\gamma$ close or larger than two, and correct anisotropy ratio between different in-plane directions. Due to a realistic high dimensional model, the results are not biased by uncontrolled approximations.