In this work novel slurries both for copper and tantalum nitride removal were developed. In the first step the Cu bulk is removed, by using high selective slurry, which stops on the underlying TaN barrier. The selectivity of Cu vs. TaN achieved with this slurry is larger than 1/100. High selective second step slurry is further introduced for removing the barrier material. In the present work data concerning dishing and erosion will be presented as a function of line width and pattern density across the wafer. Electrical yield measurements on shorts and opens of meander-fork structures will be discussed.

Niobium nitride thin films are deposited on 2 '' silicon (100) wafers using a modified industrial metal-organic (MO) CVD reactor of the type AIX-200RF, starting from tert-butylamido-tris-(diethylamido)-niobium (TBTDEN) and ammonia. Films of thicknesses 50-200 nm are deposited at temperatures ranging from 400 degrees C to 800 degrees C under reactor pressures of 1 and 5 mbar using various ammonia flow rates, and are characterized by the use of complementary techniques, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), secondary neutral mass spectrometry (SNMS), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), and electrical measurements. Films deposited above 450 degrees C consist of the cubic delta-NbN phase, apart from the presence of Nb-O and Nb-O-N species predominantly in the outermost film regions. The lowest specific resistivities, determined by four point probe measurements, are in the range 500-600 mu Omega cm. A NbN/SiO2/P-Si gate stack is fabricated using the grown niobium nitride films. From the capacitance-voltage (C-V)-curves, flat-band voltages are extracted which, when plotted against SiO2-insulator thickness, yield a work function of 4.72 eV for as-deposited films.

Niobium nitride films were deposited on Si(100) substrates using tert-butylamido-tris-(diethylamido)-niobium (TBTDEN) as the precursor in a commercial state-of-the-art MOCVD reactor. The depositions were carried out in the temperature range 400 - 800oC and the films were characterized for their crystallinity by X-ray diffraction (XRD) and surface morphology by scanning electron microscopy (SEM). Composition studies by secondary neutral mass spectrometry (SNMS) revealed that the films to be stoichiometric niobium nitride with very low concentrations of carbon or oxygen as impurities. Electrical characterization showed that the specific resistivity was strongly dependent on the substrate temperature during deposition. Furthermore, the work function of the as-deposited niobium nitride films and forming gas annealed films were determined.