This paper introduces a CMOS implementation of filter application based on single Voltage Differencing Current Conveyor (VDCC). The filter employs a single VDCC, one floating capacitor and three grounded passive components. The designed filter can simultaneously implement the band-pass and high-pass filtering responses. By means of the trans-conductance gain of the VDCC, the angular frequency and quality factor of the filter can be dynamically modified. Furthermore, avoid conflicting with the natural frequency, the quality factor can also be tuned. Layout, pre and post layout simulations are carried out for the circuits, the proposed filter which occupies 68μm×23μm area excluding the area of the passive components, using 0.18μm AMS CMOS process parameters in Cadence environment. The proposed VDCC structure can utilize additional high-impedance z-copy terminal. The natural frequency of the filter is designed as 100MHz which is suitable for the RF applications. Post-layout simulations with noise, THD, PVT, and Monte Carlo analyzes are conducted with the Spectre simulator to assess the feasibility of the developed structures. The findings of the simulations are found to be closely in consistent with the theoretical research.

In this paper, total ionizing dose (TID) induced effects on OLED devices are investigated. Two fresh and one electrically stressed OLEDs were irradiated with Cobalt-60. Current-Voltage (I-V) and illumination measurements at different operation conditions were performed. The changes in both I-V characteristics and intensity behavior showcase the degree of immunity towards irradiation, making these devices particularly appealing for space applications.

In this paper, we aimed to investigate the reliability of an organic light-emitting diode (OLED) and propose a SPICE compatible electrical model for automotive exterior lighting applications. The proposed model smoothly provides the forward and reverse current-voltage relation and also dynamic capacitive behavior of OLED is included in the model. The Automotive Electronics Council-Qualified (AEC-Q) OLED samples that are currently used in a rear stop lamp have been electrically stressed with the current density of J = 11.5 mA/cm(2)(25% more than the nominal current density value) at room temperature. The model was presented through theoretical equations for forward and reverse current-voltage characteristics and impedance behavior of OLED. The simulated and experimental results are in close agreement with each other. We characterized the intrinsic capacitance, operational voltage, wavelength, and luminance variation of OLED aged under electrical stress for 7040 h. We utilized a simple setup to monitor variations in light intensity of the tested device with a CMOS camera. Under pure electrical stress, the dominant wavelength was slightly red-shifted by 3.29 nm, the threshold voltage of the OLED is increased from 4.2 V to 5.25 V, and luminance decayed to 88% of the initial luminance with stress time, whereas spectral shape was not affected.

Bottom terminated circuit components with their low cost, improved signal speeds and good thermal performances have made the use of these elements increasingly widespread in recent years. However, in the post assembly inspection of these components solder voids can be encountered at a level of effecting the functionality and reliability of the board. It is difficult to detect solder voids manually by visual inspection; therefore x-ray systems have to be used for the detection of solder voids. Solder voids can not be accurately detected with the software on some existing low resolution x-ray control system, a manual adjustment was required on the received images. In this study; images received from low resolution x-ray device were processed with the help of various image processing algorithms and a graphical user interface program that allows automotic detection of different tyoes of solder voids was created. The work has been proven by using real x-ray images, which yield more accurate results than the existing x-ray software.

This paper presents a new CMOS realization of Z-Copy Current Differencing Buffered Amplifier (ZC-CDBA), a recently reported active element, especially suitable for analog signal processing applications. A new current-mode filter topology is proposed as an application example in order to demonstrate the performance of the ZC-CDBA. The proposed ZC-CDBA circuit is designed based on current differencing unit (CDU), third generation current conveyor (CCIII) and voltage buffer. A third generation current conveyor (CCIII) is used to duplicate Z terminal current. The performance of ZC-CDBA is verified with the PSPICE. BSIM3 0.18 μm level-7 SPICE parameters are used for the simulations.

This paper describes new configuration for the realization of an actively simulated floating inductor based on a recently introduced active element, namely Z-Copy Voltage Differencing Transconductance Amplifier (ZC-VDTA), and one grounded capacitor. Schematic-level and post-layout simulations are done for the proposed ZC-VDTA using AMS 0.18 μm CMOS process. A third order low-pass elliptic filter application is given supporting the operation of the proposed floating inductance simulator.

In this study, high-performance current-mode amplifiers Z-Copy current differencing buffered amplifier (ZC-CDBA) and current differencing trans-conductance amplifier (ZC-CDTA) are designed. In order to improve input impedances of the amplifiers, a new approach based on positive feedback is proposed. Impedance improvement/reduction is achieved by using only two extra transistors for each input. This number of extra transistors is very few compared to that in conventional negative feedback based improvement techniques. The proposed technique is justified by performing a detailed stability analysis. It is shown that the input impedances of ZC-CDBA and ZC-CDTA can be safely reduced to the level of 50 Ω by considering fabrication scatterings. The proposed amplifiers are verified with analog filter applications, a new KHN and recently proposed biquadratic and frequency agile filters. It is shown that the filters operate accurately at the frequency level of 100 MHz. This is a clear sign of the proposed amplifiers’ high performance. Layout and post layout simulations are done for the proposed circuits using AMS 0.18 µm parameters in Cadence environment.

In current mode analog circuit design, current differencing unit is widely used at the input stage of the current mode analog building blocks. The low input impedance current differencing unit is excellent for current mode circuit realization. In the current study, the positive feedback is used for reducing the input impedance of current differencing unit. The proposed current differencing unit is tested at the input stage of the ZC-CDBA (Z copy current differencing buffered amplifier) recently published as a current mode analog building block. The proposed circuit for ZC-CDBA is verified with the KHN analog filter application. The circuit simulations are verified by using BSIM3 0.18 μm level-7 SPICE parameters.

ZC-CG-CDBA (Z copy controlled gain current differencing buffered amplifier) is a new current mode active element, published recently. ZC-CG-CDBA CMOS realization and filter application are presented in this paper. The filter center frequency is controllable with the ECCII (electronically controllable second generation current conveyor). BSIM3 0.18 μm level-7 SPICE parameters are used in the simulations.

In this paper, a new CMOS realization of Z Copy Voltage Differencing Buffered Amplifier (ZC-VDBA) is presented. The performance of the proposed circuit is demonstrated on a new current-mode Kerwin-Huelsman-Newcomb (KHN) filter application, employing two ZC-VDBAs and two grounded capacitors. The circuit simulations are verified using BSIM3 0.18 μm level-7 SPICE parameters.