Solid-state reactions of titanium thin films on Si surfaces damaged and amorphized by CHF3/O2 plasma treatment were investigated. The formation temperature of the C49–TiSi2 phase increased due to plasma-induced damage and contamination from decomposed gas elements. The presence of a plasma-induced damage layer suppressed the interdiffusion of Ti and Si. The Ti5Si3 phase was formed initially at an annealing temperature of 400 °C when a plasma-induced damage layer was present at the interface. The increase of the C49–TiSi2 formation temperature may be caused by the transformation of the Ti5Si3 phase into C49–TiSi2 rather than by the direct nucleation of the C49–TiSi2 phase with a clean interface.

Surface damage induced by reactive ion etching (RIE) was investigated in terms of its depth, distribution, and correlation with dislocation generation due to subsequent oxidation. Damage structure was evaluated using transmission electron microscopy, reflection high energy electron diffraction (RHEED), Auger electron spectroscopy, and thermal wave measurement technique. A chemical dry etching and surface analyze technique of RHEED and TW were utilized to profile the damage distribution. It is identified that the surface damaged layer consists of two parts; the upper part from the surface to about 4 nm is a heavily damaged amorphous structure containing carbon and the lower part, between 5 and 30 nm, is a single crystal Si with a lot of lattice defects. It is found that RIE damage may form film edge dislocations by the interaction of subsequent selective oxidation even though damage was minimized to suppress oxidation induced stacking faults generation. High leakage current occurs when n+–p junctions are fabricated on this RIE and selective oxidation because of these film edge dislocations. It seems that generation of film edge dislocations has correlated with this carbon contained amorphous layer.

The anisotropic etching of organic films such as anti reflective coating (ARC) and resist for dry development using inductively coupled plasma (ICP) was studied. In ARC etching, the controllability of critical dimension (CD) and the selectivity to underlayers were investigated for O-2 based gas chemistries by adding N-2, He, CHF3, Cl-2, HBr and SO2. The SO2/O-2 chemistry has the advantage of both the CD controllability and the selectivity to underlayers. Field emission Auger electron spectroscopy (FE-AES) analysis revealed that the SO2 gas is useful for sidewall protection due to the sulfur deposition. In dry development etching, the controllability of the etched profile was investigated. It was discovered that the Vpp (peak to peak voltage of RF bias) increases with increasing SO2 flow ratio to O-2 so that a recession occurs in the silylated layer due to high ion energy. A vertical profile was obtained for a 0.13 mu m pattern of resist and poly-Si optimizing SO2/O-2 gas chemistry.

Surface damage induced by reactive ion etching (RIE) of SiN/SiO/sub 2/ stack used in the field isolation process was investigated in terms of its depth distribution and its correlation with junction leakage current. High leakage current is observed when oxidation induced stacking faults (OSF) are generated near bird's beaks in active regions from the Carbon-rich surface damage induced by so called stop-on-Si RIE prior to the field oxidation process. Control of both OSF and the junction leakage current at lower levels is made possible if the C-rich surface damage is eliminated either by chemical dry etching (CDE) treatment of the surface or by use of RIE conditions with lower ion energies.

This paper describes new digital signal processors for video camera system, mu-PD6410GF and mu-PD6411GF which have been designed and evaluated. Digital signal processing technologies have been adopted to these LSIs. They provide various functions for promising high-quality output image and attractive applications. Each of them is available in a 64 pin flat package. Their die sizes are 16.0 x 10.1 mm2 (mu-PD6410GF) and 16.2 x 10.2 mm2 (mu-PD6411GF). Total number of gates and memories are 26.2K gates and 27K bits each.

The authors have obtained the first digital LSI solution for a consumer video camera system. This paper shows features of two LSIs, which construct the main portion of the system and achieve much advantage in digital processing and adaptability of computer control.<>

Describes a full digital video camera system. Advanced computer control methods and its essential parameters that are drawn out from the computer simulation, and well compromised to various demands in the consumer electronics field are described. The main stream of video signal processing used in consumer video cameras has been built up with an analogue signal processing technique. However, since some high quality picture formats are spreading, an investigation to improve picture quality by means of a digital signal processing technique is discussed.<>