Mechanism of the functional thin film fabrication method using powders target has been studied. Experimental results suggest that functional thin film can be fabricated, and it is possible to fabricate elementally controlled thin films. The reaction at the substrate surface with the plasma near the substrate is almost the same as in the normal sputtering deposition process. However, it was clarified that the reaction at the interface between the target surface and the plasma has different characteristics from the usual sputtering deposition mechanism. For example, it was suggested that the deposition rate, etc., near the target differs due to the different surface structure of the ion incident area.

Al-doped ZnO films were prepared by sputtering deposition using mixtures of Al2O3 and ZnO powder targets. The film quality depended on the conditions of the target powder. The deposition rate, crystallinity, and transparency of films prepared with new, pressed powder targets were higher than those prepared with used, nonpressed powder targets. In addition, we found that pressurizing the new-powder target and increasing the substrate temperature resulted in thin films with high transparency and electrical conductivity

Indium gallium zinc oxide (In-Ga-Zn-O) thin films, which are transparent con-ductive films for liquid crystals and electroluminescent displays, were fabricated via single-step sputter deposition using one target containing different proportions of indium oxide, gallium oxide, and zinc oxide powders. Experimental results suggest that the In-Ga-Zn-O thin films can be prepared using the method of single-step radio frequency (RF) sputter deposition, applying a powder target containing indium oxide, gallium oxide, and zinc ox-ide. The In-Ga-Zn-O thin films were prepared on Si substrates, and the deposition rate depended on the target composition. In these plasma processes, electron density and tem-perature were essentially independent of target composition. The prepared films were very smooth with a root-mean-square roughness of less than 10 nm. The crystallinity of the ZnO peak was observed in all the films; whereas the In and Ga peaks were not observed in the films prepared. The X-ray photoelectron spectroscopy of the films also revealed that the elemental concentration ratio of In-Ga-Zn-O thin films could be prepared using one target, and that can be easily controlled by ratios in the In2O3/Ga2O3/ZnO composition in the powder target. The transmittances were symbolscript 75% at 800 nm for all the target mixtures, and increased with increasing In2O3 in the powder target.

A composition-controlled functional film preparation method by plasma process using powder mixture targets. Thin films of a mixture of titanium (Ti) and stainless steel (SUS), which is known as a metal that affords a high rate of hydrogen penetration, were prepared using mixture powder targets of titanium oxide (TiO2) and SUS in this study. Experimental results indicated that titanium and SUS mixture thin films were successfully prepared, and their mixtures could be controlled both on the SUS and Si substrate surface. In addition, the mixture of the TiO2 and SUS powders in the target strongly affects surface morphology and/or ent-functional thin films were prepared using 11 powder targets with variable Ti and Fe compositions. X-ray photoelectron spectroscopy depth profile results suggest that the Ti and Fe composition gradient thin films can be prepared by sputtering with mixed powder targets.

Functional thin films with a compositional gradient were deposited by a sputtering method with mixed powder targets. The composition ratio of nickel (Ni) and stainless steel (SUS304) was varied over the film thickness using several types of nickel oxide and stainless steel mixed powder targets. Our results indicate that mixed nickel-doped stainless-steel thin films were successfully prepared on both stainless-steel and Si substrates and the mixing ratio was controlled by the composition of the nickel oxide and stainless steel mixed powder.

In recent years, natural disasters such as earthquakes, torrential rains, heavy snowfalls, and lightning strikes have become a major problem. These disasters are known to cause not only direct damage to infrastructure, but also psychological damage, especially to young people. The reasons for the psychological damage caused by natural disasters are the lack of understanding of the cause of the disaster, and they are difficult to predict. On the other hand, it has been suggested that it is possible to predict the occurrence of earthquakes by using a simple space potential measurement device. In this study, we will measure electromagnetic phenomena using a simple space potential measurement device installed at the KOSEN. As a result, it was found that potential changes occur before a natural disaster. We also applied the results to create an educational device on natural disasters and conducted a questionnaire survey on its effectiveness. As a result, meaningful answers were obtained.

Thin films consisting of a mixture of indium, gallium, zinc, and oxygen were fabricated for use as transparent conductive films for liquid crystal and/or electroluminescent displays. The thin films were produced in one step by a sputtering deposition method using mixed powder targets with different proportions of indium oxide, gallium oxide, and zinc oxide. The deposition rate of the films strongly depended on the composition of the target. X-ray photoelectron spectroscopy results revealed that mixed indium, gallium, zinc, and oxygen thin films can be prepared and their element concentration ratio is controlled by the concentration ratio of the powder target.

As practical applications of superconductivity have been made in electric power engineering, the breakdown voltage superconductor coolants, such as liquid helium or supercritical helium, have been needed intensively. Furthermore, in our discharge experiment in liquid helium to search for a novel carbon nanotube structure, it was predicted that the breakdown voltage was much higher. So, using the metal spherical electrodes, d.c. breakdown voltages in 4.2K gaseous helium (just above the liquid helium) and in liquid helium have been measured. As a result of the experiment, it was observed that the value is several times larger. Moreover, it found that there was no difference in the discharge phenomenon before and after the superfluid transition temperature.

Nickel-doped stainless steel thin films with high hydrogen-entry resistance were prepared on a metal and Si surface via sputter deposition. For this, mixed nickel oxide (NiO) and stainless steel (SUS304) powders were used as the sputtering target. The experimental results indicated that nickel-doped stainless steel thin films could successfully be prepared both on the stainless steel and Si substrate surface. XPS measurements demonstrated that the deposition rate was dependent on the processing conditions such as input RF power, and the thin-film Ni/SUS304 concentration ratio strongly depended on the powder target composition.

Infrared spectroscopic study of control of plasma induced surface reactions during plasma chemical vapor deposition with ether molecules as source molecules Masanori Shinohara, Ryo Sasamoto, Takeshi Ihara, Yoshihito Yagyu, Tamiko Ohshima, Hiroharu Kawasaki 1 Department of Electrical Engineering, Fukuoka University, 2 National Institute of Technology, Sasebo College e-mail: sinohara@fukuoka-u.ac.jp

In this work, two-dimensional thin films were prepared by pulsed laser deposition (PLD) via backside irradiation. For this, a handmade transparent target holder made of quartz-glass was used to hold the powder targets. Visible-wavelength pulsed laser irradiation was applied from the holder side to the substrate. Using this new method, indium (In) and zinc (Zn)-concentrated thin films were prepared on a silicon substrate. The deposition rate of the film prepared with this method was calculated from the thickest position of the prepared film and the deposition time. The deposition rate was lower than for films prepared via conventional PLD. Two-dimensional profiles of the prepared films via backside irradiation PLD displayed a convex shape and its spatial resolution strongly depended on the laser profile. X-ray photoelectron spectroscopy measurements suggested that tailored In and Zn composition thin films could be prepared with this method using an In2O3 and ZnO powder target.

A hydrophilic amorphous carbon film was deposited with plasma-enhanced chemical vapor deposition using diisopropylether ((i-C3H7)(2)O) as a source molecule. Bonding states of hydrocarbon in the deposited film are comprised of sp(3)-hydrocarbon components, which is the same as the isopropyl group in the source molecule. On the other hand, CO bonding is formed in the deposited film, not as similar to the source molecule, diisopropylether. These results suggest that COC in the source molecule would be cleaved. This study would propose a new deposition method of a hydrophilic amorphous carbon film with ether as a source molecule.

Changes in chemical states of amorphous carbon film during ethylene (C2H4) plasma in the floating potential were investigated with multiple-internal-reflection infrared absorption spectroscopy (MIR-IRAS) and deposition rates. IRAS spectra showed that the peaks due to the sp(3)-CHX were observed, but no peaks due to sp(2)-CHX were observed. The deposition rate due to ethylene plasma was nearly twice that due to methane plasma, in the same way that the number of carbons in an ethylene molecule is twice as that in a methane molecule. It is suggested that the film growth due to ethylene plasma is the same manner of that due to methane plasma; the plasma-generated hydrocarbon species such as C2H3 and C2H5, which are generated in ethylene plasma, are adsorbed on dangling bonds that are generated by hydrogen abstraction from the deposited film surface. As a result, the deposited film is composed of sp(3)-hydrocarbon components.

Direct carboxymethylations for aliphatic hydroxyl groups in weeds such as Tall fescue (Festuca arundinacea, TF), Sweeping lovegrass (Eragrostis curvula, SL) and Canada goldenrod (Solidago Canadensis, CG) were carried out in 2-propanol / 30 % NaOH at 55 oC for 3.5 hrs. Under the typical conditions, carboxyletylated TF (TF-CM), SL-CM and CG-CM were obtained at yields of 145%, 135% and 148% based on each dry weight of lignocellulosics, respectively. Although degrees of substitutions of these CM materials were only small values such as 0.08-0.11, almost all materials were easily dissolved into water. Structural features were investigated using FT-IR and UV-Vis. Visocosities of 1% (w/w) aqueous solutions or suspensions of CM derivatives were measured by vibrating viscometer under different temperatures and pH. Since there are differences on viscosities between TF and CG in spite of same degrees of substitution, properties were different due to different structures of plant tissues.

3.実験結果 図 1 に、Sn 金属粉体と SiO2粉体の混合ター ゲットを利用して作製した薄膜の表面を XPS で解析した結果を示す。結果から、作製した薄 膜が Sn リッチな膜であり、粉体の混合比では 制御しがたいことを示唆している。図2には SnO2 と SiO2 の酸化物粉体を混合させたターゲ ットを利用して作製した薄膜の表面を XPS で 解析した結果を示す。薄膜表面の Sn/Si組成比 は、ターゲットの SnO2/ SiO2混合割合の増加と ともに増加することが判った。ここには示して いないが、SnO2 と SiO2 の酸化物粉体を混合さ せたターゲットによるプロセスプラズマ中の 発光スペクトルを測定し、Snと Siの発光強度 の比もSnO2/ SiO2混合割合の増加とともに増加 することが判った。このことは、低融点材料を 含む多元素でも機能性薄膜が作製できる事を 示唆している。