The paper presents the results of investigation of element composition of CuInSe2 (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.

The composition and structure of Ti and W coatings deposited on (111)Si under ion beam assistance (Ti+, W+) are studied by RBS, TEM, SEM, and SPM. It is found that the structure of the Ti coatings contains a layer of TiSi and TiSi2 silicides and a layer comprising TiC carbides and TiO2 oxides. The deposition of a W coating results in the formation of a layer containing clusters of W3Si, W5Si3, and WSi2 silicides and WO2 oxide. Ion beam assisted deposition of metal coatings also leads to the amorphization of the surface layer of the silicon substrate. The coating thickness increases with decreasing acceleration voltage for assisting Ti+ and W+ ions from 15 to 5 kV.

In this paper by the methods of diffractometry, scanning and atomic force microscopy, X-ray characteristic radiation induced by focused proton beam (PIXE), Rutherford backscattering of helium-4 ions we have investigated Pb1-xSnxS films obtained by "hot wall". It was found that layers obtained by condensation in the temperature range of T-s. (268-382) degrees C have virtually a single phase orthorhombic crystal structure with lattice parameters which vary in the range of a. (0.4214-0.4293) nm, b. (1.1246-1.1313) nm, c. (0.3980-0.4015) nm. CSD sizes in the films are equal to L-(040). (35.5-47.5) nm, L-(131). (44.4-51.5) nm. The distribution of the components of a compound of films (mu-PIXE) and their elemental composition (PIXE) are determined. It was found that some samples were depleted by sulfur in comparison with the stoichiometric composition. Atomic concentration of the components of the solid solution varies in the range of C-Pb. 12.71-19.13; C-Sn. 40.29-44.46; C-S. 38.36-42.75 at. %. By increasing the substrate temperature, the lead content in the films increases and the sulfur content decreases, the atomic concentration of tin in this case varies slightly.

Me-based coatings (Me=Ti, Cr, Zr, Mo and W) deposited on elastomer by means of self-ion assisted deposition (SIAD) technique exhibit some advanced properties such as improved adhesion stability, hardness, wettability, wear resistance. The influence of ion energy and ion of metals on the resulting composition and properties of films was investigated with Rutherford backscattering technique, scanning electron microscopy, atomic force microscopy and mechanical testing of elastomer. The present work describes the basic results from a SIAD system which has been used to produce Me-based films on rubber.

Thin Me-based coatings were deposited by of self-ion assisted deposition (SIAD) on elastomer substrates. The influence of ion of metals on the topography resulting films was investigated with scanning electron microscopy.

PhSnS thin films were prepared by hot-wall vacuum evaporation. The Rutherford backscattering technique was employed for the investigation of P(x)bS(n-x)S thin films composition. With a help of atomic force microscopy the main stages in the development of the thin films were characterized. Contact angle measurements of water drop on P(x)bS(n-x)S thin films have been conducted on our original setup.

The composition of Zr-based thin films on rubber was investigated by utilizing the Rutherford backscattering technique and RUMP code simulation. The level of adhesion between the coating fabricated on rubber by means of self-ion assisted deposition was measured using Pin Pull Test. The coating deposited on the rubber consists of Zr, O, C, H. The self-ion assisted deposition process may successfully control the level of adhesion of the coating to the rubber and causes strong modification of the macroscopic properties of the rubber surface.

In this paper a composite structure, topography, wettability and nanohardness of a (100) Si surface modified by means of ion-assisted deposition of metal (Me) coatings in conditions of a self-irradiation are discussed.

Analysis of chemical bonds, element composition and depth distribution of component in coating formed by self ion-assisted deposition of metal (Zr, Mo, W) onto rubber using a method in which the metal deposition was accompanied by bombardment Zr+ ions is reported. Analysis was carried out using Rutherford back scattering and X-ray photoelectric spectroscopy methods. The analysis of XPS-spectra of levels Zr3d and C1s has allowed to establish that in a metal coatings are available oxide metal (ZrO2), hydrooxide metal (Zr(OH)(4)), carbon, hydrocarbon (C-C, C-H) connections and connections with hydroxylic bonds (C-OH). It is revealed that a modified surface of a elastomer have extremely wear resistance.

Investigation of influence of Mo deposition on glass substrates by SIAD on its surface topography and wettability was conducted. We observe several steps in the process of the film growth. Contact angle measurements showed that deposition of the Mo films on glass makes the surface less hydrophilic. With an increase of the irradiation dose, the roughness and contact angle increase rapidly at first and then decreases.

In that report we observe the initial stages in the process of lm growth at di erent irradiation doses. Investigations of in uence of Mo deposition on glass substrates by means of self-ion-assisted deposition on its topography (atomic force microscopy) and wettability (sessile-drop method) were carried out. It was found out that with an increase of the irradiation dose, the average roughness and the contact angle increases rapidly at rst and then decrease. 2.45 2.77 increase in the contact angle of water when Mo-based coating was deposited on the glass was observed.

PbSnS thin films were prepared by hot-wall vacuum evaporation (HWVE) and effect of substrate temperature on structural and surface morphological properties was thoroughly investigated by means of Rutherford backscattering spectroscopy, atomic force microscopy and water contact angle techniques, respectively. Streszczenie. Cienkie wartwy PbSnS byly wytwarzane metodą naparowania (HWVE). Badano wplyw temperatury podloza na wlaściwości warstwy metodą spektroskopii Rutherforda i mikroskopem sil atomowych . (Struktura i and wsiąkliwośc cienkich wartw Pb0.25Sn1.75S2 ).

Investigation of influence of Xe+ irradiation on composition of crystal CuInSe2 surface layers by Rutherford backscattering and channeling was conducted. In the paper we represent concentration changes of Se, In and Cu atoms in the surface layers of crystal CuInSe2.

The investigation of influence of Xe+ ions irradiation of graphite on its surface topography and wettability was conducted. With the increase of the irradiation dose, the roughness average increases rapidly at first (when the sample was irradiated at the dose of 1 x 10(14) cm(-2)) and then decreases slowly. The atomic force microscopy three-dimensional pictures showed that after irradiation of graphite of Xe+ ions with a dose of 3 x 10(15) cm(-2) hemispherical grains (from 0.2 to 0.8 mu m in diameter) appear on its surface. Surface water contact angle measurement showed that irradiation of graphite by Xe+ ions leads to a hydrophobic surface of graphite. We have observed that irradiation of graphite by Xe+ ions can be used for obtaining graphite surface with desirable topography and water wettability.

The composition, radiation damage and morphology of silicon modified by means of self - ion assisted Co deposition was investigated.

Pb0,5Sn1,5S2 thin films were prepared by hot-wall vacuum deposition (HWVD) and effect of substrate temperature on structural and surface morphological properties was thoroughly investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and water contact angle techniques, respectively. It is seen that contact angle measurements on (Pb,Sn)S-2 films can be used to assess the quality of these materials prior to device fabrication.