Abstract Pb(Zr0.5Ti0.5)O3/RuO2 (PZT/RuO2) thin film heterostructures with controlled PZT and RuO2 orientation were successfully grown in-situ on SiO2/(001)Si substrates at 525°C, using metal-organic chemical vapor deposition (MOCVD). XRD analysis revealed that the textured orientation of the PZT films is strongly dependent on the orientation of RuO2 bottom electrode layers. PZT layers grown on (101)-textured RuO2 exhibit a predominant (001) orientation, while those grown on (110)-textured RuO2 present a mixed (001)-(111)-(110) polycrystalline structure. Highly (110)-oriented RuO2 layers were grown using relatively high deposition temperatures and low rates (∼350°C and 3 nm/min, respectively). The RuO2 layers exhibited resistivities of 34-40 μΩ-cm, average grain size of 65±15 nm, and surface roughness of 3-10 nm (rms), while the PZ...