At present, the focused ion beam method is an effective technique for nanoscale profiling of a solid surface and prototyping of micro- and nanoscale structures. The article reveals the results of experimental studies on improving the accuracy and resolution of nanoscale profiling of the surface of solids with a focused ion beam. Investigations of the regularities of the influence of the focused ion beam current, beam dwell time and overlap on the parameters of nanoscale structures and the surface profile have been carried out. The influence of the FIB parameters on the deviation of the structure profile from the specified by the template was estimated. Experimental studies have been carried out to determine the influence of the direction of scanning of the ion beam by the template on the magnitude of the error that occurs when the structure of the graphic template is transferred to the substrate. The optimal relationships between the FIB current and the dimensions of the structures being formed have been determined, thus making it possible to ensure the highest accuracy and rate of formation of nanoscale structures. The results can be used to optimize the choice of the ion-beam milling parameters to achieve the maximum accuracy of reproduction of the given sizes of structures.

The paper presents the results of experimental studies of the influence of the main parameters of a focused ion beam (FIB) during surface profiling on the accuracy of transfer of a pattern to a silicon substrate to create nanoscale field emission structures. In this work, the optimal FIB currents are determined, introducing a minimum amount of distortions during the formation of structures of various sizes. The possibilities of the method of local ion-beam etching of structures in a wide range from 0.1 to 2 μm are shown. The prospects of using this technology for the creation of field emission structures have been demonstrated. It is determived the current-voltage characteristic of the fabricated field-emission cells with a threshold voltage of the onset of emission of ∼ 2.5 V and a maximum current of 300 nA at 30 V.

This article presents the results of a theoretical study of a field emission cell with a vertically oriented emitter. The field emission cell was formed based on a combination of etched methods with a Ga + focused ion beam and local ion-stimulated tungsten deposition. The influence of the geometric parameters of the field emission cell on the electric field strength at the emitter top is estimated. It was found that a decrease in the rounding-off radius of the emitter top from 150 to 5 nm leads to an increase in the electric field strength by more than an order of magnitude from 1.28 × 10 6 to 16 × 10 6 V/cm. A decrease in the diameter of the field emission cell from 2.5 μm to 900 nm contributes to an increase in the electric field strength by 33.6 % from 3.04 × 10 6 to 4.58 × 10 6 V/cm.

This paper presents the results of theoretical and experimental studies aimed at studying the influence of the basic geometric parameters of micromechanical cantilevers on the resonant frequency of their oscillations. The dependences of the oscillation frequency on the length of the cantilever beam, obtained based on mathematical modeling are theoretically investigated by the finite element method. In experimental studies that used AFM cantilever beams, the beams were shortened stepwise by the method of local ion beam etching by focused ion beam (FIB) Ga + . After each step, the change in the resonant frequency of oscillations was monitored. It was found that the application of the FIB method allows you to accurately change the geometric parameters of the probe beams, which, in turn, allows you to change the resonant frequency of cantilever oscillations with high accuracy. During the analysis of the obtained dependences of the resonant frequency of oscillations on the geometric parameters of the beams, it was found that a decrease in the length of the cantilever from 110 to 80 μm leads to an approximately twofold increase in the resonant frequency of oscillations of the cantilever from 320 to 620 kHz. The obtained graphs of the theoretical and experimental dependencies are compared, which showed a good correlation of the results.

This paper presents the results of experimental studies of the influence of the technological parameters of a focused ion beam (FIB) on the process of local ion-stimulated deposition of carbon and tungsten when creating elements of vacuum nanoelectronics. The dependences are obtained illustrating the influence of the time of the FIB exposure at a point on the geometric parameters of the structures. Experimental samples of vacuum field-emission diodes based on semiconductor-metal-dielectric structures were fabricated by ion-stimulated carbon deposition. A technological process for creating field-emission diodes has been developed. The prospects of applying the FIB method for creating structures of vacuum field emission nanoelectronics are demonstrated.

The results of an experimental study of the fabrication of high aspect probe tips for atomic force microscopy (AFM) and critical dimension AFM (CD AFM) using the focused ion beam (FIB) milling and ion beam induced deposition of carbon are presented. It is shown that the probes formed by the FIB method have a higher resolution of surface scanning and allow studying nanoscale structures without distortion. In this work, a technique for the formation of AFM probes based on the use of a combination of ion-beam milling and ion-induced carbon deposition was developed. Based on the developed technique, high aspect probe with about 8 μm high, with a tip radius of about 40 nm and an aspect ratio of 30:1, were fabricated. A probe for CD AFM was also formed using FIB-induced deposition of carbon with about 320 nm of flare. The results obtained in the study can be used in the development of technological processes for the manufacturing and modification of special probes for AFM, including probes CD-AFM. The paper shows the possibility of forming the tip of the probes for specialized tasks of nanodiagnostics and nanometrology. The proposed technology allows reducing the artefacts of scanning probe microscopy and improving the adequacy of the results of AFM studies.

Abstract The article presents the results of the development of technology for the formation of vacuum field emission structures. Experimental studies of local ion-stimulated deposition of W and C and ion-beam etching were carried out and their effects on the formation of final structures were studied. The technological process of manufacturing nanoscale field emission structures was developed, and experimental samples were fabricated. It is shown that the use of the method of focused ion beams (FIB) demonstrates its advantages compared with other methods.

Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 MΩ to 700.32±300.83 MΩ and low-resistance state (LRS) from 0.03±0.02 MΩ to 0.09±0.03 MΩ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.

The results of an experimental study of the fabrication of probe tips for scanning near-field optical microscopy (SNOM) using the focused ion beam (FIB) milling and ion beam induced deposition are presented. Methods of the FIB local milling and FIB-induced deposition of tungsten and carbon onto the tip of an atomic force microscope (AFM) probe are studied. In this work, a technique for the formation of AFM probes based on the use of a combination of ion-beam etching and ion-induced carbon deposition was developed. Based on the developed technique, several aperture probes for SNOM with an aperture diameter of 50, 150, and 200 nm, an apex height of about 20 nm, and a cone angle of about 35° were fabricated. The paper presents that the formation of SNOM probes by FIB-induced deposition allows creating a high efficiency tool for nanodiagnostics. The obtained results can be used to develop technological processes for the fabrication of specialized AFM probes and procedures for the express monitoring of technological process parameters in the manufacturing of the elements for micro- and nanoelectronics.