High temperature (≥ 650°C) MBE growth of A;As and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.
Keller, B.P.合作论文数university of california santa barbara36Eric J Tarsa合作论文数19
Michael Bergmann合作论文数12gerald negley合作论文数12michael leung合作论文数12peter andrews合作论文数11david todd emerson合作论文数9
Umesh K. Mishra合作论文数Department of Electrical and Computer Engineering, College of Engineering, University of California, Santa Barbara8
Sten Heikman合作论文数KYOCERA SLD Laser, Inc.8thomas g coleman合作论文数7
Brian Thibeault合作论文数Electrical and Computer Engineering Department;University of California;Electrical and Computer Engineering Department, University of California7Jayesh Bharathan合作论文数7howard dean nordby合作论文数6david b slater合作论文数6Matthew Donofrio合作论文数6Amber Abare合作论文数6e j tarsa合作论文数5kathleen marie doverspike合作论文数5zhimin jamie yao合作论文数5charles m swoboda合作论文数5R. C. Glass合作论文数Cree, Inc.5james seruto合作论文数4ronan letoquin合作论文数4michael john oloughlin合作论文数4
Ting Li合作论文数4Kevin Haberern合作论文数4Ashay Chitnis合作论文数4yankun fu合作论文数3zongjie yuan合作论文数3tao tong合作论文数3
Primit Parikh合作论文数Transphorm, Inc.3
Arthur Gossard合作论文数College of Engineering, University of California, Santa Barbara3
Richard Mirin合作论文数Applied Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology3Nicholas W. Medendorp合作论文数3
Steven P. Denbaars合作论文数Solid State Lighting & Energy Electronics Center, University of California, Santa Barbara3john adam edmond合作论文数2ronan p le toquin合作论文数2mark raffetto合作论文数2norbert hiller合作论文数2maryanne becerra合作论文数2julio a garceran合作论文数2theodore lowes合作论文数2mohan krishnamurthy合作论文数2max batres合作论文数2John English合作论文数2ting li合作论文数2Michael J Oloughlin合作论文数2
Paul Fini合作论文数university of california santa barbara2
John Bowers合作论文数Department of Electrical and Computer Engineering, College of Engineering, University of California, Santa Barbara2
