Latent linear dynamical systems with Bernoulli observations provide a powerful modeling framework for identifying the temporal dynamics underlying binary time series data, which arise in a variety of contexts such as binary decision-making and discrete stochastic processes (e.g., binned neural spike trains). Here we develop a spectral learning method for fast, efficient fitting of probit-Bernoulli latent linear dynamical system (LDS) models. Our approach extends traditional subspace identification methods to the Bernoulli setting via a transformation of the first and second sample moments. This results in a robust, fixed-cost estimator that avoids the hazards of local optima and the long computation time of iterative fitting procedures like the expectation-maximization (EM) algorithm. In regimes where data is limited or assumptions about the statistical structure of the data are not met, we demonstrate that the spectral estimate provides a good initialization for Laplace-EM fitting. Finally, we show that the estimator provides substantial benefits to real world settings by analyzing data from mice performing a sensory decision-making task.

Classical models of perceptual decision-making assume that subjects use a single, consistent strategy to form decisions, or that decision-making strategies evolve slowly over time. Here we present new analyses suggesting that this common view is incorrect. We analyzed data from mouse and human decision-making experiments and found that choice behavior relies on an interplay among multiple interleaved strategies. These strategies, characterized by states in a hidden Markov model, persist for tens to hundreds of trials before switching, and often switch multiple times within a session. The identified decision-making strategies were highly consistent across mice and comprised a single ‘engaged’ state, in which decisions relied heavily on the sensory stimulus, and several biased states in which errors frequently occurred. These results provide a powerful alternate explanation for ‘lapses’ often observed in rodent behavioral experiments, and suggest that standard measures of performance mask the presence of major changes in strategy across trials.

Charge transfer (CT) cocrystals, molecular crystals composed of electron donating and accepting species, are being developed for applications in optoelectronics. Here we present optical and electronic characterization of the CT cocrystal phenothiazine-tetracyanoquinodimethane (PTZ-TCNQ). This material has a broad NIR absorption peak with an optical band edge less than 0.6 eV. We used density functional theory calculations to identify the origin of the low energy CT states and changes in the Raman spectra. We also demonstrate the fabrication of long, ribbon-like oriented cocrystals using an evaporative alignment method. Cocrystals grown on Si substrates were fabricated into organic field effect transistors. Despite theoretical predictions of ambipolarity, only electron conduction was observed, with mobilities on the order of 10-4 cm2 V-1 s-1. Measurements of the temperature dependence of the mobility indicated a superexchange mediated hopping mechanism for charge transport, with a characteristic scale of 0.19 eV.

A classic view of the striatum holds that activity in direct and indirect pathways oppositely modulates motor output. Whether this involves direct control of movement, or reflects a cognitive process underlying movement, remains unresolved. Here we find that strong, opponent control of behavior by the two pathways of the dorsomedial striatum depends on the cognitive requirements of a task. Furthermore, a latent state model (a hidden Markov model with generalized linear model observations) reveals that—even within a single task—the contribution of the two pathways to behavior is state dependent. Specifically, the two pathways have large contributions in one of two states associated with a strategy of evidence accumulation, compared to a state associated with a strategy of repeating previous choices. Thus, both the demands imposed by a task, as well as the internal state of mice when performing a task, determine whether dorsomedial striatum pathways provide strong and opponent control of behavior. The authors use virtual reality tasks and a latent state modeling approach to demonstrate that the opposing control of behavior by striatal pathways is dependent on both task demands and changes in internal state.

A classic view of the striatum holds that activity in direct and indirect pathways oppositely modulates motor output. Whether this involves direct control of movement, or reflects a cognitive process underlying movement, has remained unresolved. Here we find that strong, opponent control of behavior by the two pathways of the dorsomedial striatum (DMS) depends on a task’s cognitive demands. Furthermore, a latent state model (a hidden markov model with generalized linear model observations) reveals that—even within a single task—the contribution of the two pathways to behavior is state-dependent. Specifically, the two pathways have large contributions in one of two states associated with a strategy of evidence accumulation, compared to a state associated with a strategy of repeating previous choices. Thus, both the cognitive demands imposed by a task, as well as the strategy that mice pursue within a task, determine whether DMS pathways provide strong and opponent control of behavior.

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe2 crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T′ semimetallic phase at high temperatures. Alloying MoTe2 with WTe2 reduces the energy barrier between these two phases, while also allowing access to the Td Weyl semimetal phase. The Mo1−xWxTe2 alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe2-WTe2 system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study Mo1−xWxTe2 alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T′, and Td structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe2-WTe2 system, including single-phase 2H, 1T ′, and Td regions, as well as a two-phase 1T ′ + Td region. Disorder arising from compositional fluctuations in Mo1−xWxTe2 alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T-MoTe2 mode and the enhancement of a double-resonance Raman process in 2H-Mo1−xWxTe2 alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in Mo1−xWxTe2 alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two phases, while also allowing access to the T$_d$ Weyl semimetal phase. The MoWTe$_2$ alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe$_2$-WTe$_2$ system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe$_2$ alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T$^\prime$, and T$_d$ structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe$_2$-WTe$_2$ system, including single-phase 2H, 1T$^\prime$, and T$_d$ regions, as well as a two-phase 1T$^\prime$ + T$_d$ region. Disorder arising from compositional fluctuations in MoWTe$_2$ alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T$^\prime$-MoTe$_2$ mode and the enhancement of a double-resonance Raman process in 2H-MoWTe$_2$ alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe$_2$ alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe2 crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T' semimetallic phase at high temperatures. Alloying MoTe2 with WTe2 reduces the energy barrier between these two phases, while also allowing access to the T-d Weyl semimetal phase. The Mo1-xWxTe2 alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe2-WTe2 system. We combine polarization-resolved Raman spectroscopy with x-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study bulk Mo1-xWxTe2 alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T', and T-d structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe2-WTe2 system, including single-phase 2H, 1T', and T-d regions, as well as a two-phase 1T' + T-d region. Disorder arising from compositional fluctuations in Mo1-xWxTe2 alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T'-MoTe2 mode and the enhancement of a double-resonance Raman process in 2H-Mo1-xWxTe2 alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in Mo1-xWxTe2 alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.

The structural polymorphism intrinsic to select transition metal dichalcogenides provides exciting opportunities for engineering novel devices. Of special interest are memory technologies that rely upon controlled changes in crystal phase, collectively known as phase change memories (PCMs). MoTe$_2$ is ideal for PCMs as the ground state energy difference between the hexagonal (2H, semiconducting) and monoclinic (1T’, metallic) phases is minimal. This energy difference can be made arbitrarily small by substituting W for Mo on the metal sublattice, thus improving PCM performance. Therefore, understanding the properties of Mo$_{1-x}$W$_x$Te$_2$ alloys across the entire compositional range is vital for the technological application of these versatile materials. We combine Raman spectroscopy with aberration-corrected scanning transmission electron microscopy and x-ray diffraction to explore the MoTe$_2$-WTe$_2$ alloy system. The results of these studies enable the construction of the complete alloy phase diagram, while polarization-resolved Raman measurements provide phonon mode and symmetry assignments for all compositions. Temperature-dependent Raman measurements indicate a transition from 1T’-MoTe$_2$ to a distorted orthorhombic phase (T$_d$) below 250 K and facilitate identification of the anharmonic contributions to the optical phonon modes in bulk MoTe$_2$ and Mo$_{1-x}W$_x$Te$_2$ alloys. We also identify a Raman-forbidden MoTe$_2$ mode that is activated by compositional disorder and find that the main WTe$_2$ Raman peak is asymmetric for x<1. This asymmetry is well-fit by the phonon confinement model and allows the determination of the phonon correlation length. Our work is foundational for future studies of Mo$_x$W${1-x}$Te$_2$ alloys and provides new insights into the impact of disorder in transition metal dichalcogenides.

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe_2 crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T^' semimetallic phase at high temperatures. Alloying MoTe_2 with WTe_2 reduces the energy barrier between these two phases, while also allowing access to the T_d Weyl semimetal phase. The MoWTe_2 alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe_2-WTe_2 system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe_2 alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T^', and T_d structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe_2-WTe_2 system, including single-phase 2H, 1T^', and T_d regions, as well as a two-phase 1T^' + T_d region. Disorder arising from compositional fluctuations in MoWTe_2 alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T^'-MoTe_2 mode and the enhancement of a double-resonance Raman process in 2H-MoWTe_2 alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe_2 alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two phases, while also allowing access to the T$_d$ Weyl semimetal phase. The MoWTe$_2$ alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe$_2$-WTe$_2$ system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe$_2$ alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T$^\prime$, and T$_d$ structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe$_2$-WTe$_2$ system, including single-phase 2H, 1T$^\prime$, and T$_d$ regions, as well as a two-phase 1T$^\prime$ + T$_d$ region. Disorder arising from compositional fluctuations in MoWTe$_2$ alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T$^\prime$-MoTe$_2$ mode and the enhancement of a double-resonance Raman process in 2H-MoWTe$_2$ alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe$_2$ alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.

We examine anharmonic contributions to the optical phonon modes in bulk T_d-MoTe_2 through temperature-dependent Raman spectroscopy. At temperatures ranging from 100 K to 200 K, we find that all modes redshift linearly with temperature in agreement with the Grüneisen model. However, below 100 K we observe nonlinear temperature-dependent frequency shifts in some modes. We demonstrate that this anharmonic behavior is consistent with the decay of an optical phonon into multiple acoustic phonons. Furthermore, the highest frequency Raman modes show large changes in intensity and linewidth near T≈ 250 K that correlate well with the T_d → 1T^' structural phase transition. These results suggest that phonon-phonon interactions can dominate anharmonic contributions at low temperatures in bulk T_d-MoTe_2, an experimental regime that is currently receiving attention in efforts to understand Weyl semimetals.

We examine anharmonic contributions to the optical phonon modes in bulk T d -MoTe2 through temperature-dependent Raman spectroscopy. At temperatures ranging from 100 K to 200 K, we find that all modes redshift linearly with temperature in agreement with the Grüneisen model. However, below 100 K we observe nonlinear temperature dependent frequency shifts in some modes. We demonstrate that this anharmonic behavior is consistent with the decay of an optical phonon into multiple acoustic phonons. Furthermore, the highest frequency Raman modes show large changes in intensity and linewidth near T ≈ 250 K that correlate well with the T d →1T ' structural phase transition. These results suggest that phonon-phonon interactions can dominate anharmonic contributions at low temperatures in bulk T d -MoTe2, an experimental regime that is currently receiving attention in efforts to understand Weyl semimetals.