We present our low-loss 200-mm SiN platform for quantum photonic applications. Optimized for quantum computing, the platform includes efficient waveguide-integrated SNSPD and is designed for 920-nm operation, making QD single photon sources compatible. Full-text article not available; see video presentation

We demonstrate a SiN platform dedicated to quantum photonics around 900 to 940 nm. The platform is designed to operate with available deterministic single photon sources. Waveguides and passive photonic devices highlight low propagation and insertion losses. Highly performing waveguide-integrated SNSPD allow for efficient on-chip single photon detection.

Hybrid nanomechanical systems embedding a quantum light emitter, such as a semiconductor quantum dot (QD), are actively investigated both for their fundamental interest and for potential applications to quantum information technologies. Here, we explore the high-order vibration modes of a conical GaAs nanowire that embeds a few self-assembled InAs QDs. On-chip electrodes generate a 3D force field that can drive flexural and longitudinal vibration modes. Mechanical vibrations are detected optically by measuring the microphotoluminescence spectrum of the QDs. The latter also provides a fingerprint of the mode nature. Starting from the sub-MHz fundamental flexural mode, we show that higher-order resonances enable a dramatic increase in both mechanical frequency and hybrid coupling strength. In particular, we identify a low-loss flexural mode that resonates at 190 MHz. This frequency exceeds the QD radiative rate, which constitutes an important step toward the resolved-sideband regime. For a QD located at the stress maximum, the hybrid coupling strength reaches 3.9 MHz, the highest value reported so far for a QD hybrid system. These results demonstrate the potential of the QD-nanowire platform for high-frequency hybrid nanomechanics.

The optical properties of nanowire-based InGaN/GaN multiple quantum wells (MQWs) heterostructures grown by plasma-assisted molecular beam epitaxy are investigated. The beneficial effect of an InGaN underlayer grown below the active region is demonstrated and assigned to the trapping of point defects transferred from the pseudo-template to the active region. The influence of surface recombination is also investigated. For low InN molar fraction value, we demonstrate that AlOxdeposition efficiently passivate the surface. By contrast, for large InN molar fraction, the increase of volume non-radiative recombination, which we assign to the formation of additional point defects during the growth of the heterostructure dominates surface recombination. The inhomogeneous luminescence of single nanowires at the nanoscale, namely a luminescent ring surrounding a less luminescent centre part points towards an inhomogeneous spatial distribution of the non-radiative recombination center tentatively identified as intrinsic point defects created during the MQWs growth. These results can contribute to improve the performances of microLEDs in the visible range.

We demonstrate NbN-based waveguide-integrated superconducting nanowire single photon detectors fabricated on 200 mm SOI wafers using a fully CMOS-compatible process. We achieve 81 % efficiency at 100 Hz dark count rate, 3.2 ns decay time and 200 MHz maximum count rate.

A photonic wire antenna embedding individual quantum dots (QDs) constitutes a promising platform for both quantum photonics and hybrid nanomechanics. We demonstrate here an integrated device in which on-chip electrodes can apply a static or oscillating bending force to the upper part of the wire. In the static regime, we achieve control over the bending direction and apply at will tensile or compressive mechanical stress on any QD. This results in a blue shift or red shift of their emission, with direct application to the realization of broadly tunable sources of quantum light. As a first illustration of operation in the dynamic regime, we excite the wire fundamental flexural mode and use the QD emission to detect the mechanical vibration. With an estimated operation bandwidth in the GHz range, electrostatic actuation opens appealing perspectives for the exploration of QD-nanowire hybrid mechanics with high-frequency vibrational modes.

We introduce a method to investigate excitonic spin flips in a neutral quantum dot (QD) that is driven nonresonantly. By inserting the QD in an anisotropic photonic structure, one creates an imbalance between the radiative decay rates of the two bright excitons. Direct spin flips between the bright excitons as well as indirect ones (via a dark exciton) mix the level populations and profoundly affect the degree of linear polarization of the excitonic emission. Measuring this quantity under continuous wave optical excitation yields the spin-flip rate over a broad range of excitation powers. Additional time-resolved experiments allow disentangling the contributions of bright-bright and dark-bright spin flips in the low-excitation regime. After providing theoretical background, we demonstrate the method on a self-assembled InAs QD embedded in a GaAs photonic wire featuring an elliptical cross section. For low-excitation power and at T = 5 K, bright-bright spin flips are much slower than dark-bright spin flips, which, in turn, remain much slower than the radiative decays. Upon increasing the temperature, we observe a superlinear increase in the bright-bright spin-flip rate which completely reverses the rate hierarchy above T = 50 K. Moreover, polarization measurements reveal a dramatic increase in the spin-flip rate with the pumping power. Our findings are relevant to spontaneous emission control by anisotropic photonic structures and to the spectral coherence of QD-based quantum light sources.

Quantum information processing brings new protocols to the field of communications, by ensuring absolute security of information transfer thanks to the laws of quantum physics. Furthermore, in the field of computing, quantum processing offers the perspective of performing massively parallel calculations, orders of magnitude faster than with a classical computer. For these two applications, excellent detectors are required with ultimate performances. Superconducting nanowire single photon detectors (SNSPDs) are the best candidate, as they can reach near-unity detection efficiency. We are developing on-chip waveguide integrated SNSPDs on 200 mm SOI wafers, addressing both the material, architecture design and fabrication process challenges.

We review recent studies of cavity switching induced by the optical injection of free carriers in micropillar cavities containing quantum dots. Using the quantum dots as a broadband internal light source and a streak camera as detector, we track the resonance frequencies for a large set of modes with picosecond time resolution. We report a record-fast switch-on time constant (1.5 ps) and observe major transient modifications of the modal structure of the micropillar on the 10 ps time scale: mode crossings are induced by a focused symmetric injection of free carriers, while a lifting of several mode degeneracies is observed when off-axis injection breaks the rotational symmetry of the micropillar. We show theoretically and experimentally that cavity switching can be used to tailor the dynamic properties of the coupled QD-cavity system. We report the generation of ultrashort spontaneous emission pulses (as short as 6 ps duration) by a collection of frequency-selected QDs in a switched pillar microcavity. These pulses display a very small coherence length, attractive for ultrafast speckle-free imaging. Moreover, the control of QD-mode coupling on the 10 ps time scale establishes cavity switching as an appealing resource for quantum photonics.

To deliver an optimal performance for photonic quantum technologies, semiconductor quantum dots should be integrated in a carefully designed photonic structure. Here, we introduce a nanowire optical nanocavity designed for free-space emission. Thanks to its ultrasmall mode volume, this simple structure offers a large acceleration of spontaneous emission (predicted Purcell factor of 6.3) that is maintained over a 30-nm bandwidth. In addition, a dielectric screening effect strongly suppresses the emission into the 3D continuum of radiation modes. The fraction of spontaneous emission funneled into the cavity mode reaches 0.98 at resonance and exceeds 0.95 over a 100-nm spectral range. Close-to-optimal collection efficiency is maintained over an equivalent bandwidth and reaches a predicted value of 0.54 at resonance for a first lens with a numerical aperture (NA) of 0.75. As a first experimental demonstration of this concept, we fabricate an Au–SiO2–GaAs device embedding isolated InAs quantum dots. We measure a maximal acceleration of spontaneous emission by a factor as large as 5.6 and a bright quantum dot emission (collection efficiency of 0.35 into NA = 0.75). This nanowire cavity constitutes a promising building block to realize advanced sources of quantum light for a broad range of material systems.

Nanowire antennas embedding a single semiconductor quantum dot (QD) represent an appealing solid-state platform for photonic quantum technologies. We present recent work aiming at generating indistinguishable photons with this system. We first investigate decoherence channels that spectrally broaden the QD emission, and discuss in particular the impact of nanowire thermal vibrations. We also develop nanowire optical nanocavities, which provide a large acceleration of the QD spontaneous emission, so that it becomes less sensitive to environmental noises.

We report on the precise determination, in Ag2ZnSnSe4 epitaxial layer, of both the band gap E-g and the characteristic Urbach energy U that describes the density of localized, defect states in the gap. Various origins for these defect band tail states have been considered, together with the corresponding modeling for their density of states, in order to fit the whole of the optical spectral data. The interest of the methodology developed here is to account quantitatively not only for the absorption and steady-state photoluminescence data but also for the time-resolved photoluminescence spectra. We compare the different origins of localized band tail states to select the standard textbook, Urbach tail model that corresponds to short-range band gap fluctuations. Such an approach is different from the one most often used to evaluate the energy extent of the localized states, which is the Stokes shift between the energies of the photoluminescence emission and the absorption threshold. The advantage of the present method is that no arbitrary choice of the low power excitation has to be done to select the photoluminescence emission spectrum and its peak energy. Thanks to this systematic study of both photoluminescence excitation and time-resolved photoluminescence spectra at low temperature (6 K), the values E-g = 1226 +/- 5 meV and U = 20 +/- 3 meV are found for this promising absorber for thin films photovoltaics.

We report on ultrafast all-optical switching experiments performed on pillar microcavities containing a collection of quantum dots (QDs). Using QDs as a broadband internal light source and a detection setup based on a streak camera, we track in parallel the frequencies of a large set (>10) of resonant modes of an isolated micropillar during the entire duration of switching events and with a 2 ps temporal resolution. Being much faster and more convenient than standard approaches based on pump–probe spectroscopy, this method is very well suited for in-depth studies of cavity switching, noticeably in view of applications in the field of quantum photonics. We report as a first demonstrative example an investigation of the switch-on time constant τon dependence as a function of the pump power and the observation of a remarkably low value of τon(≈1.5 ps) for optimized pumping conditions. As a second illustration, we report the observation of a transient lifting of the degeneracy of a polarization-degenerate cavity mode, induced by a non-centrosymmetric injection of free carriers.

Different types of buffer layers such as InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of c-plane InGaN/GaN-based light-emitting diodes (LEDs). The present work investigates the role of two different kinds of pregrowth layers (low In-content InGaN UL and GaN UL namely "GaN spacer") on the emission of the core-shell m-plane InGaN/GaN single quantum well (QW) grown around Si-doped c̅-GaN microwires obtained by silane-assisted metal organic vapor phase epitaxy. According to photo- and cathodoluminescence measurements performed at room temperature, an improved efficiency of light emission at 435 nm with internal quantum efficiency >15% has been achieved by adding a GaN spacer prior to the growth of QW. As revealed by scanning transmission electron microscopy, an ultrathin residual layer containing Si located at the wire sidewall surfaces favors the formation of high density of extended defects nucleated at the first InGaN QW. This contaminated residual incorporation is buried by the growth of the GaN spacer and avoids the structural defect formation, therefore explaining the improved optical efficiency. No further improvement is observed by adding the InGaN UL to the structure, which is confirmed by comparable values of the effective carrier lifetime estimated from time-resolved experiments. Contrary to the case of planar c-plane QW where the improved efficiency is attributed to a strong decrease of point defects, the addition of an InGaN UL seems to have no influence in the case of radial m-plane QW.

We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental mode of a GaAs/AlAs micropillar. We track in real time by time-resolved photoluminescence its fundamental mode during its relaxation, using the emission of the QD ensemble as a broadband internal light source. Sub-ensembles of QDs emitting at a given frequency, interact transiently with the mode and emit an ultrashort spontaneous emission pulse into it. By playing with switching parameters and with the emission frequency of the QDs, selected by spectral filtering, pulse durations ranging from 300 ps down to 6 ps have been obtained. These pulses display a very small coherence length, which opens potential applications in the field of ultrafast imaging. The control of QD-mode coupling on ps-time scales establishes also cavity switching as a key resource for quantum photonics.

Funneling a large fraction of the spontaneous emission (SE) of a quantum emitter into a single optical mode is a powerful strategy for improving the brightness of quantum light sources or developing an efficient spin-photon interface. In the solid state, preferential emission into a single localized mode has been first achieved taking advantage of the Purcell effect that arises in semiconductor optical microcavities. In the with a linear polarization oriented along the major axis of the ellipse. Polarization-resolved measurements conducted on elliptical GaAs photonic nanowires embedding spectrally isolated InAs QDs fully confirm the predicted performances: the fraction of collected photons with the desired polarization can be as high as 95% [4].

Nanowire antennas embedding single quantum dots (QDs) have recently emerged as a versatile solid-state platform for quantum optics. Within the nanowire section, the emitter position simultaneously determines the strength of the light-matter interaction, as well as the coupling to potential decoherence channels. Therefore, to quantitatively understand device performance and guide future optimization, it is highly desirable to map the emitter position with an accuracy much smaller than the waveguide diameter, on the order of a few hundreds of nanometers. We introduce here a nondestructive, all-optical mapping technique that exploits the QD emission into two guided modes with different transverse profiles. These two modes are fed by the same emitter and thus interfere. The resulting intensity pattern, which is highly sensitive to the emitter position, is resolved in the far-field using Fourier microscopy. We demonstrate this technique on a standard microphotoluminescence setup and map the position of individual QDs in a nanowire antenna with a spatial resolution of ±10 nm. This work opens important perspectives for the future development of light-matter interfaces based on nanowire antennas. Beyond single-QD devices, it will also provide a valuable tool for the investigation of collective effects that imply several emitters coupled to an optical waveguide.

Reports on Cu\(_2\)ZnSn(S\(_x\)Se\(_{1-x}\))\(_4\) (CZTSSe) solar cell devices all show an open-circuit voltage lower than expected, especially when compared to CuIn\(_x\)Ga\(_{1-x}\)(S,Se)\(_2\) devices, which reduces their power efficiency and delays their development. A high concentration of intrinsic defects in CZTSSe, and their stabilization through neutral complex formation, which induces some local fluctuations, are at the origin of local energy shifts in the conduction and valence band edges. The implied band tail in Cu\(_2\)ZnSnS\(_4\) is studied in this work by combining three types of optical spectroscopy data: emission spectra compared to photoluminescence excitation spectroscopy, emission spectra as a function of excitation power, and time-resolved photoluminescence spectra. All these data converge to show that both the bandgap and the band tail of localized states just below are dependent on the degree of order/disorder in the Cu/Zn cation sublattice of the quaternary structure: in the more ordered structures, the bandgap increases by about 50 meV, and the energy range of the band tail is decreased from about 110 to 70 meV.

In this work we have measured the far-field emission patterns of In As quantum dots embedded in a GaAs tapered nanowire and used an open-geometry Fourier modal method for determining the radial position of the quantum dots by computing the far-field emission pattern for different quantum dot locations.

In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor in the nanowire geometry. Regarding the ISB characteristics, we report absorption covering 1.45–1.75 μm using Ge-doped quantum wells, with comparable performance to Si-doped planar heterostructures. We also report similar ISB absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing ISB phenomena. The spectral shift of the ISB absorption as a function of the doping concentration due to many body effects confirms that Si and Ge efficiently dope GaN/AlN nanowire heterostructures.