In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability.

For high-power and high-frequency electronic applications, the III-V nitride layers are usually grown on sapphire or silicon carbide substrates. However, the development of these applications on silicon substrates has obvious technological advantages (cost, integration). In the present work, AlGaN/GaN heterostructures are grown on a resistive [111] silicon substrate (4000-10000 /spl Omega/.cm) in a reactive molecular beam epitaxy system using ammonia (Riber Compact 21). The structural quality of the epilayers as well as electrical properties have been investigated. AlGaN/GaN HEMT devices with different gate lengths and source to drain spacings have been realized in order to investigate their static characteristics and RF power performances.

In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high frequency performances of submicron gate length devices are analysed demonstrating their RF power capability.